Datasheet > HBP1036S6R

HBP1036S6R

更新时间： 2024-01-15 02:47:39

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		晶体晶体管
页数	文件大小	规格书
5页	191K
描述
General Purpose NPN Epitaxial Planar Transistors

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数据手册

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HBP1036S6R 数据手册

Spec. No. : C203S6R

Issued Date : 2003.09.12

Revised Date : 2005.03.30

Page No. : 1/ 5

CYStech Electronics Corp.

General Purpose NPN Epitaxial Planar Transistors

(dual transistors)

HBN2411S6R

Features

• Two BTC2411chips in a SOT-363 package.

• Mounting possible with SOT-323 automatic mounting machines.

• Transistor elements are independent, eliminating interference.

• Mounting cost and area can be cut in half.

• High I_C(Max). I_{C (Max)}= 0.6A

• Low V_CE(sat), TYP. V_CE(sat)= 0.2V at I_C/I_B= 500mA/50mA

Optimal for low Voltage operation

• Complementary to HBP1036S6R

Equivalent Circuit

Outline

HBN2411S6R

SOT-363R

Tr1

Tr2

The following characteristics apply to both Tr1 and Tr2

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

VCBO

VCEO

VEBO

Limits

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Power Dissipation

Junction Temperature

Storage Temperature

0.6

200(total) (Note)

150

°C

Tstg

-55~+150

°C

Note : 150mW per element must not be exceeded.

HBN2411S6R

CYStek Product Specification

12 3 4 5

中文翻译

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