Datasheet > HBP2907S6R

HBP2907S6R

更新时间： 2024-01-27 17:02:49

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		晶体晶体管
页数	文件大小	规格书
5页	194K
描述
General Purpose PNP Epitaxial Planar Transistors(dual transistors)

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数据手册

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HBP2907S6R 数据手册

Spec. No. : C317S6R

Issued Date : 2006.11.08

Revised Date :

CYStech Electronics Corp.

Page No. : 1/5

General Purpose PNP Epitaxial Planar Transistors

(dual transistors)

HBP2907S6R

Features

• Two BTP2907 chips in a SOT-363 package.

• Mounting possible with SOT-323 automatic mounting machines.

• Transistor elements are independent, eliminating interference.

• Mounting cost and area can be cut in half.

• Excellent H_FElinearity.

• Complementary to HBN2222S6R.

• Pb-free package

Equivalent Circuit

Outline

SOT-363R

HBP2097S6R

Tr1

Tr2

The following characteristics apply to both Tr1 and Tr2

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

VCBO

VCEO

VEBO

-60

-5

-600

Power Dissipation

200(total) (Note)

Junction Temperature

Storage Temperature

Tstg

150

-55~+150

°C

Note: 150mW per element must not be exceeded.

HBP2907S6R

CYStek Product Specification

12 3 4 5

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