Datasheet > HBP3906S6R

HBP3906S6R

更新时间： 2024-09-30 05:34:55

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		晶体晶体管
页数	文件大小	规格书
4页	149K
描述
Dual General Purpose PNP Transistors

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中文翻译

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数据手册

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HBP3906S6R 数据手册

Spec. No. : C318S6R

Issued Date : 2003.04.11

Revised Date :

CYStech Electronics Corp.

Page No. : 1/4

Dual General Purpose PNP Transistors

HBP3906S6R

Description

The HBP3906S6R is a spin-off of our popular SOT-23/SOT-323 three-leaded devices. It is

designed for general purpose amplifier applications and is housed in the SOT-363R six-leaded

surface mount package. By putting two discrete devices in one package, this device is ideal

for low power surface mount applications where board space is at a premium.

Features

• HFE, 100--300

• Low VCE(sat), ≤0.4V

• Simplifies circuit design

• Reduces board space.

• Reduces component count

Equivalent Circuit

SOT-363R

HBP3906S6R

Absolute Maximum Ratings (Ta=25°C)

Parameter

Collector-Base Voltage

Symbol

VCBO

VCEO

VEBO

Limits

Unit

-40

-5

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-200

150

Total Package Dissipation @TA=25℃

(Note 1)

Junction Temperature

Storage Temperature

Tstg

°C

-55~+150

Note 1: Device is mounted on a FR-4 glass epoxy PCB with area measuring 1.0 0.75 0.062 in.

HBP3906S6R

CYStek Product Specification

12 3 4

中文翻译

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