Datasheet > HB56U432SB-6BN

HB56U432SB-6BN

更新时间： 2024-09-27 20:12:31

品牌	Logo	应用领域
日立 - HITACHI		动态存储器内存集成电路
页数	文件大小	规格书
19页	225K
描述
EDO DRAM Module, 4MX32, 60ns, MOS, SIMM-72

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HB56U432SB-6BN 数据手册

HB56U432B/SB-6BN/7BN/8BN

4,194,304-word × 32-bit High Density Dynamic RAM Module

ADE-203-558(Z)

Preliminary - Rev.0.0

Apr.02,1996

Description

The HB56U432 is a 4M × 32 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM

(HM5117405BS) sealed in SOJ package.

An outline of the HB56U432 is 72-pin single in-line package.

The HB56U432 offers Extended Data Out (EDO) Page Mode as a high speed access mode.

Therefore, the HB56U432 makes high density mounting possible without surface mount technology. The

HB56U432 provides common data inputs and outputs.

Decoupling capacitors are mounted beneath each SOJ on the module board.

Features

•

72-pin single in-line package

Lead pitch: 1.27 mm

•

Single 5 V (±5%) supply

High speed

Access time: t_RAC= 60/70/80 ns (max)

Access time: t_CAC= 15/18/20 ns (max)

Low power dissipation

•

Active mode: 4.62/4.20/3.78 W (max)

Standby mode (TTL): 84 mW (max)

Standby mode (CMOS): 42 mW (max)

EDO mode capability

•

2,048 refresh cycle: 32 ms

3 variations of refresh

RAS-only refresh

CAS-before-RAS refresh

Hidden refresh

•

TTL compatible

Preliminary: This document contains information on a new product. Specifications and information

contained herein are subject to change without notice.

12 3 4 5 6 7...19

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与HB56U432SB-6BN相关器件

型号	品牌	获取价格	描述	数据表
HB56U432SB-6N	ETC	获取价格	x32 EDO Page Mode DRAM Module
HB56U432SB-6NL	ETC	获取价格	x32 EDO Page Mode DRAM Module
HB56U432SB-7BN	ETC	获取价格	x32 EDO Page Mode DRAM Module
HB56U432SB-7N	ETC	获取价格	x32 EDO Page Mode DRAM Module
HB56U432SB-7NL	ETC	获取价格	x32 EDO Page Mode DRAM Module
HB56U432SB-8BN	ETC	获取价格	x32 EDO Page Mode DRAM Module
HB56U464EJ-5	ETC	获取价格	x64 EDO Page Mode DRAM Module
HB56U464EJ-6	ETC	获取价格	x64 EDO Page Mode DRAM Module
HB56U464EJ-6B	ETC	获取价格	x64 EDO Page Mode DRAM Module
HB56U464EJ-7	ETC	获取价格	x64 EDO Page Mode DRAM Module