Datasheet > HB52D168DC-A6F

HB52D168DC-A6F

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
日立 - HITACHI		动态存储器
页数	文件大小	规格书
68页	302K
描述
Synchronous DRAM Module, 16MX64, 6ns, CMOS, DIMM-144

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HB52D168DC-A6F 数据手册

HB52D168DC-F

128 MB Unbuffered SDRAM S.O.DIMM

16-Mword ´ 64-bit, 100 MHz Memory Bus, 2-Bank Module

(8 pcs of 8 M ´ 16 components)

PC100 SDRAM

ADE-203-1092B (Z)

Rev. 1.0

Mar. 28, 2000

Description

The HB52D168DC is a 8M ´ 64 ´ 2 banks Synchronous Dynamic RAM Small Outline Dual In-line

Memory Module (S.O.DIMM), mounted 8 pieces of 128-Mbit SDRAM (HM5212165FTD) sealed in TSOP

package and 1 piece of serial EEPROM (2-kbit) for Presence Detect (PD). An outline of the product is 144-

pin Zig Zag Dual tabs socket type compact and thin package. Therefore, it makes high density mounting

possible without surface mount technology. It provides common data inputs and outputs. Decoupling

capacitors are mounted beside TSOP on the module board.

Features

Fully compatible with : JEDEC standard outline 8-byte S.O.DIMM

: Intel PCB Reference design (Rev.1.0)

144-pin Zig Zag Dual tabs socket type (dual lead out)

¾ Outline: 67.60 mm (Length) ´ 31.75 mm (Height) ´ 3.80 mm (Thickness)

¾ Lead pitch: 0.80 mm

3.3 V power supply

Clock frequency: 100 MHz (max)

LVTTL interface

Data bus width: ´ 64 Non parity

Single pulsed RAS

4 Banks can operates simultaneously and independently

Burst read/write operation and burst read/single write operation capability

Programmable burst length : 1/2/4/8/full page

12 3 4 5 6 7...68

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型号	品牌	描述	获取价格	数据表
HB52D168DC-A6FL	HITACHI	Synchronous DRAM Module, 16MX64, 6ns, CMOS, DIMM-144	获取价格
HB52D168GB-A6B	ELPIDA	128 MB Unbuffered SDRAM Micro DIMM 16-Mword ×	获取价格
HB52D168GB-A6BL	ELPIDA	128 MB Unbuffered SDRAM Micro DIMM 16-Mword ×	获取价格
HB52D168GB-B	ELPIDA	128 MB Unbuffered SDRAM Micro DIMM 16-Mword ×	获取价格
HB52D168GB-B6B	ELPIDA	128 MB Unbuffered SDRAM Micro DIMM 16-Mword ×	获取价格
HB52D168GB-B6BL	ELPIDA	128 MB Unbuffered SDRAM Micro DIMM 16-Mword ×	获取价格