Datasheet > HABC807-25

HABC807-25

更新时间： 2024-01-10 07:05:56

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	409K
描述
GENERAL PURPOSE TRANSISTOR

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中文翻译

获取价格

数据手册

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HABC807-25 数据手册

HABC807(PNP)

GENERAL PURPOSE TRANSISTOR

REPLACEMENT TYPE : BC807

FEATURES

 For general AF applications

 High collector current

 High current gain

 Low collector-emitter saturation voltage

 Complementary types: HABC817(NPN)

SOT-23

MAXIMUM RATINGS (T_A=25 °C unless otherwise noted)

1: BASE 2：EMITTER 3: COLLECTOR

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

-50

Unit

MARKING:

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

HABC807-16 5A

HABC807-25 5B

HABC807-40 5C

-45

-5

-500

300

°C

P_C

T_J

150

T_stg

-55to+150

417

°C

Thermal Resistance Junction to Ambient R_θJA

°C /w

ELECTRICAL CHARACTERISTICS (T_A=25 °C unless otherwise noted)

Parameter

Symbol Test conditions

Min

-50

-45

-5

Max

Unit

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

V_CBO

V_CEO

V_EBO

I_CBO

I_C=-10μA , I_E=0

I_C=-10mA , I_B=0

IE=-1μA , I_C=0

V_CB=-45V , I_E=0

-0.1

-0.2

-0.1

600

Collector Cut-off Current

I_CEO

V_CE=-40V , I_B=0

Emitter Cut-off Current

I_EBO

V_EB=-4V , I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

f_T

V_CE=-1V , I_C=-100mA

V_CE=-1V , I_C=-300mA

I_C=-500mA , I_B=-50mA

V_CE=-5V , I_C=-10mA , f=100MHz

I_E= 0; V_CB= -10 V , f = 1 MHz

100

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

-0.7

-1.2

100

MHz

collector Capacitance

C_C

CLASSIFICATION OF h

100-250

Rank

160-400

250-600

Range

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E-mail:hkt@heketai.com

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