Datasheet > HABC817

HABC817

更新时间： 2024-01-18 02:20:47

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	417K
描述
GENERAL PURPOSE TRANSISTOR

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中文翻译

获取价格

数据手册

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HABC817 数据手册

HABC817(NPN)

GENERAL PURPOSE TRANSISTOR

REPLACEMENT TYPE : BC817

FEATURES

 For general AF applications

 High collector current

 High current gain

 Low collector-emitter saturation voltage

 Complementary types: HABC807(PNP)

SOT-23

MAXIMU MRATINGS (T_A= 25°C unless otherwise noted)

1: BASE 2：EMITTER 3: COLLECTOR

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

MARKING:

HABC817-16 6A

HABC817-25 6C

HABC817-40 6C

500

°C

P_C

300

T_J

150

T_stg

-55 to +150

417

°C

Thermal Resistance Junction to Ambient R_θJA

°C /w

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted)

Parameter

Symbol Test

Min

Max

Unit

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

V_CBO

V_CEO

V_EBO

I_CBO

I_C=10μA , I_E=0

I_C=10mA , I_B=0

I_E=1μA , I_C=0

V_CB=45V , I_E=0

0.1

600

μA

Emitter Cut-off Current

I_EBO

V_EB=4V , I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

V_B

V_CE=1V , I_C=100mA

V_CE=1V , I_C=500mA

I_C=500mA , I_B=50mA

V_CE=1V , I_C=500mA

V_CB=10V , f=1MHz

V_CE=5V , I_C= 10mA

100

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter Voltage

0.7

1.2

Collector Capacitance

C_ob

MHz

Transition Frequency

f_T

100

CLASSIFICATION OF h

Rank

160-400

250-600

100-250

Range

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E-mail:hkt@heketai.com

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