HABC817(NPN)
GENERAL PURPOSE TRANSISTOR
REPLACEMENT TYPE : BC817
FEATURES
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary types: HABC807(PNP)
SOT-23
MAXIMU MRATINGS (TA = 25°C unless otherwise noted)
1: BASE 2:EMITTER 3: COLLECTOR
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Value
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
50
45
MARKING:
HABC817-16 6A
HABC817-25 6C
HABC817-40 6C
V
5
V
500
mA
mW
°C
PC
300
TJ
150
Tstg
-55 to +150
417
°C
Thermal Resistance Junction to Ambient RθJA
°C /w
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Symbol Test
Min
50
45
5
Max
Unit
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
VCBO
VCEO
VEBO
ICBO
IC=10μA , IE=0
IC=10mA , IB=0
V
IE=1μA , IC=0
V
VCB=45V , IE=0
0.1
0.1
600
μA
μA
Emitter Cut-off Current
IEBO
VEB=4V , IC=0
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VB
VCE=1V , IC=100mA
VCE=1V , IC=500mA
IC=500mA , IB=50mA
IC=500mA , IB=50mA
VCE=1V , IC=500mA
VCB=10V , f=1MHz
VCE=5V , IC= 10mA
100
40
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
0.7
1.2
1.2
V
V
V
Collector Capacitance
Cob
10
pF
MHz
Transition Frequency
fT
100
CLASSIFICATION OF h
FE
6A
6B
6C
Rank
160-400
250-600
100-250
Range
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