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HABS4 PDF预览

HABS4

更新时间: 2024-11-18 15:18:03
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
4页 221K
描述
ABS

HABS4 数据手册

 浏览型号HABS4的Datasheet PDF文件第2页浏览型号HABS4的Datasheet PDF文件第3页浏览型号HABS4的Datasheet PDF文件第4页 
RoHS  
HABS6 THRU HABS10  
COMPLIANT  
High Efficient Bridge Rectifiers  
Features  
● UL recognition, file #E313149  
● Ideal for automated placement  
● Glass passivated chip junction  
● High surge current capability  
● Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
Typical Applications  
General purpose use in AC/DC bridge full wave rectification for  
SMPS, lighting ballast, adapter, battery charger, home  
appliances, office equipment, and telecommunication  
applications.  
Mechanical Data  
ackage: ABS  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant, Halogen free  
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
As marked on body  
Polarity:  
(T =25Unless otherwise specified)  
Maximum Ratings  
a
HABS6  
HABS8  
HABS8  
800  
HABS10  
HABS10  
1000  
PARAMETER  
SYMBOL  
UNIT  
HABS6  
600  
Device marking code  
V
V
V
V
A
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
RRM  
V
420  
560  
700  
RMS  
V
Maximum DC blocking Voltage  
600  
800  
1000  
DC  
Average rectified output current  
I
O
1.0  
30  
@60Hz sine wave, R-load, Tc=120℃  
Forward Surge Current (Non-repetitive)  
@60Hz Half-sine wave,1 cycle, Tj=25℃  
Forward Surge Current (Non-repetitive)  
I
A
FSM  
I2t  
60  
@1ms, square wave, 1 cycle, Tj=25℃  
Current squared time  
@1ms≤t<8.3ms Tj=25℃,Rating of per diode  
A2s  
3.74  
T
Storage temperature  
Junction temperature  
-55 ~ +150  
stg  
T
-55 ~ +150  
j
(T =25Unless otherwise specified)  
Electrical Characteristics  
a
HABS6  
HABS8  
75  
HABS10  
PARAMETER  
SYMBOL  
UNIT TEST CONDITIONS  
Maximum reverse recovery  
time  
IF=0.5A, IR=1.0A,  
trr  
ns  
Irr=0.25A  
Maximum instantaneous  
forward voltage drop per diode  
V
F
V
I
=0.5A  
1.7  
FM  
5
Maximum DC reverse current  
at rated DC blocking voltage  
per diode  
T =25℃  
j
I
μA  
R
T =125℃  
j
100  
Measured at 1MHz and  
Applied Reverse  
Typical junction capacitance  
Cj  
pF  
12  
Voltage of 4.0 V.D.C  
1 / 4  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
S-S1494  
Rev.1.5, 16-Aug-22  
www.21yangjie.com  

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