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HA22022

更新时间： 2024-02-16 06:42:31

品牌	Logo	应用领域
日立 - HITACHI		放大器微波
页数	文件大小	规格书
12页	47K
描述
GaAs MMIC Low Noise Amplifier for Micro Wave Application

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HA22022 数据手册

HA22022

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Vdd

Ratings

Unit

Supply voltage

Maximum current

Power dissipation

Channel temperature

Storage temperature

Operation temperature

Maximum input power

Idd

°C

100

Tch

150

Tstg

–55 to +125

–20 to +70

+15

°C

Topr

Pin max

°C

dBm

Electrical Characteristics (Ta = 25°C, Vdd = 3V)

Item

Symbol Min

Typ

Max

Unit

Test Conditions

No signal

Quiescent current

Power gain

Noise figure

Idd

—

1.3

f = 1.5 GHz

Typical Performance (Ta = 25°C, Vdd = 3V)

Item

Symbol

VSWR in

VSWR out

IM3

Typ

1.7

Unit

—

Test Conditions

f = 1.5 GHz

VSWR (input)

VSWR (output)

—

f = 1.5 GHz

3rd order intermodulation

distortion

f = 1.5 GHz, Pin = –30 dBm

123 4 5 6 7...12

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