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HA22012GBATR

更新时间： 2024-02-16 13:23:50

品牌	Logo	应用领域
日立 - HITACHI		射频和微波射频放大器微波放大器
页数	文件大小	规格书
12页	52K
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HA22012GBATR 数据手册

HA22012

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Vdd

Idd

Ratings

Unit

Supply voltage

Maximum current

Power dissipation

Channel temperature

Storage temperature

Operation temperature

°C

100

Tch

150

Tstg

Topr

–55 to +150

–20 to +70

°C

Electrical Characteristics (Ta = 25°C, Vdd = 3V)

Item

Symbol Min

Typ

Max

Unit

Test Conditions

No signal

Quiescent current

Power gain

Noise figure

Idd

1.5

11.5

—

5.5

13.5

1.9

f = 1.9 GHz

2.5

Typical Performance (Ta = 25°C, Vdd = 3V)

Item

Symbol

VSWR in

VSWR out

IM3

Typ

1.6

Unit

—

Test Conditions

f = 1.9 GHz

VSWR (input)

VSWR (output)

—

f = 1.9 GHz

3rd order intermodulation

distortion

f = 1.9 GHz, UD = 1.9006 Ghz

Pin = –30 dBm

123 4 5 6 7...12

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