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H5TQ2G63BFR-11C PDF预览

H5TQ2G63BFR-11C

更新时间: 2024-10-01 12:01:15
品牌 Logo 应用领域
海力士 - HYNIX 存储内存集成电路动态存储器双倍数据速率时钟
页数 文件大小 规格书
93页 1117K
描述
2Gb DDR3 SDRAM

H5TQ2G63BFR-11C 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:TFBGA, BGA96,9X16,32
针数:96Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.36
风险等级:5.79Is Samacsys:N
访问模式:MULTI BANK PAGE BURST最长访问时间:0.18 ns
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):900 MHz
I/O 类型:COMMON交错的突发长度:4,8
JESD-30 代码:R-PBGA-B96JESD-609代码:e1
长度:13 mm内存密度:2147483648 bit
内存集成电路类型:DDR DRAM内存宽度:1
功能数量:1端口数量:1
端子数量:96字数:2147483648 words
字数代码:2000000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:
组织:2GX1输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA96,9X16,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH峰值回流温度(摄氏度):260
电源:1.5 V认证状态:Not Qualified
刷新周期:8192座面最大高度:1.2 mm
自我刷新:YES连续突发长度:4,8
最大待机电流:0.01 A子类别:DRAMs
最大压摆率:0.21 mA最大供电电压 (Vsup):1.575 V
最小供电电压 (Vsup):1.425 V标称供电电压 (Vsup):1.5 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:20
宽度:9 mmBase Number Matches:1

H5TQ2G63BFR-11C 数据手册

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H5TQ2G63BFR  
2Gb DDR3 SDRAM  
Lead-Free&Halogen-Free  
(RoHS Compliant)  
** Contents are suithout notice.  
Rev. 0.5 / Aug. 2010  
1
This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  

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