MAXIMUM RATINGS
SYMBOL VDRM
DEVICE NUMBERS
UNITS
50
100
200
400
600
H3SF35
H3SA35
H3SB35
H3SD35
H3SM35
H3SF55
H3SA55
H3SB55
H3SD55
H3SM55
Repetitive Peak Off-State Voltage Repetitive
Peak Reverse Voltage Gate Open, and TJ =
110° C
VDRM
VOLT
RMS On-State Current at TC = 80 ° C and
Conduction Angle of 180°
Peak Surge (Non-Repetitive) On-State
Current, One-Cycle, at 50Hz or 60 Hz
I t(RMS)
ITSM
35.0
350
55.0
550
AMP
AMP
Peak Gate-Trigger Current for 3µsec. Max.
Peak Gate-Power Dissipation at IGT < IGTM
Average Gate-Power Dissipation
IGTM
PGM
2
2
AMP
WATT
WATT
°C
20
0.5
20
0.5
PG(AV)
Tstg
Storage Temperature Range
-40 to +150
-40 to +110
Operating Temperature Range, Tj
Toper
°C
ELECTRICAL CHARACTERISTICS
At Specified Case Temperatures
Peak Off-State Current, Gate Open
TC = 110° C VDRM & VRRM = Max. Rating
Maximum On-State Voltage, (PEAK) at
TC=25°C
IDRM &
IRRM
mA
MAX.
1.0
1.5
2
VOLT
MAX
VTM
1.6
and IT = Rated Amps
DC Holding Current, Gate Open and TC =
25°C
Critical Rate-Of-Rise of Off-State Voltage,
Gate Open, TC = 110°C
DC Gate-Trigger Voltage for VD = 12VDC,
RL = 60 OHM and at TC = 25°C
DC Gate - Trigger Voltage for Anode Voltage =
12VDC, RL = 60W and at TC =25° C
Gate Controlled Turn-On Time for TD + TR
IGT = 150mA and TC = 25° C
mA
MAX.
IHO
80
200
80
80
200
80
Critical
dv/dt
V/µsec.
V/µsec.
IGT
V GT
T gt
mA
MAX.
VOLT
MAX
°C/WATT
TYP
2.0
2.5
1.3
2.0
2.5
0.9
Thermal Resistance, Junction-to-Case
RqJ-C
Note:
(1) All Hutson Isolated TO-239 SCR’s are
UL Recognized. UL number E95589(N).
SOLID STATE CONTROL DEVICES
41