Datasheet > H1200NC25W

H1200NC25W

更新时间： 2024-02-24 09:38:57

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
16页	845K
描述
Silicon Controlled Rectifier,

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H1200NC25W 技术参数

生命周期：	Obsolete	包装说明：	DISK BUTTON, O-CXDB-X4
Reach Compliance Code：	unknown	HTS代码：	8541.30.00.80
风险等级：	5.74	配置：	SINGLE
最大直流栅极触发电流：	2000 mA	JESD-30 代码：	O-CXDB-X4
元件数量：	1	端子数量：	4
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	ROUND
封装形式：	DISK BUTTON	认证状态：	Not Qualified
最大均方根通态电流：	1340 A	断态重复峰值电压：	2500 V
重复峰值反向电压：	125 V	表面贴装：	YES
端子形式：	UNSPECIFIED	端子位置：	UNSPECIFIED
触发设备类型：	GATE TURN-OFF SCR	Base Number Matches：	1

H1200NC25W 数据手册

WESTCODE

An IXYS Company

Fast Symmetrical Gate Turn-Off Thyristor type H1200NC25#

Notes on ratings and characteristics.

1. Maximum Ratings.

1.1 Off-state voltage ratings.

Unless otherwise indicated, all off-state voltage ratings are given for gate conditions as diagram 1. For

other gate conditions see the curves of figure 5. It should be noted that V_DRMis the repeatable peak

voltage which may be applied to the device and does not relate to a DC operating condition. While not

given in the ratings, V_DCshould ideally be limited to 60% V_DRMin this product.

Diagram 1.

1.2 Reverse voltage rating.

All devices in this series have a minimum V_RRMof 100 Volts. If specified at the time of order, a V_RRMup to

80%V_DRMis available.

1.3 Peak turn-off current.

The figure given in maximum ratings is the highest value for normal operation of the device under

conditions given in note 2 of ratings. For other combinations of I_TGQ, V_Dand C_ssee the curves of figures

15 & 16. The curves are effective over the normal operating range of the device and assume a snubber

circuit equivalent to that given in diagram 2. If a more complex snubber, such as an Underland circuit, is

employed then the equivalent C_Sshould be used and L_s<0.3µH must be ensured for the curves to be

applied.

Diagram 2.

1.4 R.M.S and average current.

Measured as for standard thyristor conditions, double side cooled, single phase, 50Hz, 180° half-

sinewave. These are included as a guide to compare the alternative types of GTO thyristors available,

values can not be applied to practical applications, as they do not include switching losses.

1.5 Surge rating and I²t.

Ratings are for half-sinewave, peak value against duration is given in the curve of figure 4.

1.6 Snubber loop inductance.

Use of GTO thyristors with snubber loop inductance, L_s<0.3µH implies no dangerous V_svoltages (see

diagrams 2 & 3) can be applied, provided the other conditions given in note 1.3 are enforced.

Alternatively V_sshould be limited to 700 Volts to avoid possible device failure.

Data Sheet. Type H1200NC25# Issue 2

Page 3 of 15

July, 2019

1 234 5 6 7...16

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