Datasheet > H08N02CTS

H08N02CTS

更新时间： 2024-02-11 14:05:25

品牌	Logo	应用领域
HSMC		/
页数	文件大小	规格书
4页	42K
描述
Dual N-Channel Enhancement-Mode MOSFET (20V, 8A)

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数据手册

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H08N02CTS 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	Base Number Matches：	1

H08N02CTS 数据手册

Spec. No. : MOS200611

Issued Date : 2006.06.01

Revised Date : 2006.06.28

Page No. : 2/4

HI-SINCERITY

MICROELECTRONICS CORP.

Electrical Characteristics (T_A=25°C, unless otherwise noted)

Symbol

• Static

Characteristic

Test Conditions

Min.

Typ.

Max.

Unit

BV_DSS

Drain-Source Breakdown Voltage

Drain-Source On-State Resistance

V_GS=0V, I_D=250uA

1.6

V_GS=2.5V, I_D=5.5A

V_GS=4.5V, I_D=6.5A

V_DS=V_GS, I_D=250uA

V_DS=16V, V_GS=0V

R_DS(on)

mΩ

V_GS(th)

I_DSS

Gate Threshold Voltage

0.6

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

Forward Transconductance

I_GSS

V_GS=±4.5V, V_DS=0V

±200

g_FS

V_DS=10V, I_D=6.5A

• Dynamic

Q_g

Total Gate Charge

Q_gs

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

V_DS=10V, I_D=6A, V_GS=4.5V

V_DS=10V, V_GS=0V, f=1MHz

V_DD=10V, I_D=1A, V_GS=4.5V

2.4

3.6

476

65.1

Q_gd

C_iss

C_oss

C_rss

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Turn-on Rise Time

Turn-off Delay Time

Turn-off Fall Time

t_d(on)

t_r

t_d(off)

t_f

100

500

200

R_GEN=6Ω

• Drain-Source Diode Characteristics

I_S

Maximum Diode Forward Current

Drain-Source Diode Forward Voltage

1.7

1.2

V_SD

V_GS=0V, I_S=1.5A

0.61

Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%

Switching

t_on

t_off

Test Circuit

V_DD

Waveforms

t_d(on)

t_r

90%

t_d(off)

t_f

90%

R_D

V_IN

V_OUT

10%

Output, V_OUT

Inverted

V_GEN

90%

R_G

50%

Pulse Width

10%

Input, V_IN

H08N02CTS

HSMC Product Specification

123 4

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