5秒后页面跳转
捷配首页

Datasheet > H0500KC25L
H0500KC25L PDF预览

H0500KC25L

更新时间： 2024-02-06 03:49:01
品牌 Logo 应用领域
IXYS 栅栅极
页数 文件大小 规格书
15页 179K
描述
Symmetrical GTO SCR, 280A I(T)RMS, 2500V V(DRM), 1125V V(RRM), 1 Element

阅读下载

获取价格

H0500KC25L 技术参数

生命周期：Obsolete包装说明：DISK BUTTON, O-CXDB-X4
Reach Compliance Code：unknownHTS代码：8541.30.00.80
风险等级：5.75配置：SINGLE
最大直流栅极触发电流：1500 mAJESD-30 代码：O-CXDB-X4
元件数量：1端子数量：4
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：ROUND
封装形式：DISK BUTTON认证状态：Not Qualified
最大均方根通态电流：280 A断态重复峰值电压：2500 V
重复峰值反向电压：1125 V表面贴装：YES
端子形式：UNSPECIFIED端子位置：UNSPECIFIED
触发设备类型：SYMMETRICAL GTO SCRBase Number Matches：1

H0500KC25L 数据手册

 浏览型号H0500KC25L的Datasheet PDF文件第5页浏览型号H0500KC25L的Datasheet PDF文件第6页浏览型号H0500KC25L的Datasheet PDF文件第7页浏览型号H0500KC25L的Datasheet PDF文件第9页浏览型号H0500KC25L的Datasheet PDF文件第10页浏览型号H0500KC25L的Datasheet PDF文件第11页 
WESTCODE An IXYS Company  
Fast Symmetrical Gate Turn-Off Thyristor type H0500KC25#  
tgq  
tf  
0.9  
VDM  
ITGQ  
VD  
0.1  
0.1  
VGR  
VGQ  
QGQ  
VG(AV)  
IGQ  
tgw  
Diagram 11, Turn-off parameter definitions.  
In addition to the turn-off figures given in characteristic data, the curves of figures 10, 11 & 12 give the  
relationship of IGQ QGQ and tgq to turn-off current (ITGQ) and diGQ/dt. Only typical values of IGQ are given due  
to a great dependence upon the gate circuit impedance, which is a function of gate drive design not the  
device. The tgq is also, to a lesser extent, affected by circuit impedance and as such the maximum figures  
given in data assume a good low impedance circuit design. The curves of figures 17 & 18 give the tail time  
and minimum off time to re-fire device as a function of turn-off current. The minimum off time to re-fire the  
device is distinct from tgw, the gate off time given in characteristics. The GTO thyristor may be safely re-  
triggered when a small amount of tail current is still flowing. In contrast, the gate circuit must remain low  
impedance until the tail current has fallen to zero or below a level which the higher impedance VGR circuit  
can sink without being pulled down below –2 Volts. If the gate circuit is to be switched to a higher  
impedance before the tail current has reached zero then the requirements of diagram 12 must be applied.  
itail  
R
(VGR- itailR)>2V  
Diagram 12.  
VGR  
The figure tgw, as given in the characteristic data, is the maximum time required for the tail current to  
decay to zero. The figure is applicable under all normal operating conditions for the device; provided  
suitable gate drive is employed. At lower turn-off current, or with special gate drive considerations, this  
time may be reduced (each case needs to be considered individually).Typical turn-off losses are given in  
the curves of figures 13 & 14, the integration period for the losses is nominally taken to the end of the tail  
time (Itail<1A) i.e. :-  
tgt+ttail  
Eoff =  
iv.dt.  
∫
0
Data Sheet. Type H0500KC25# Issue 2  
Page 8 of 15  
August, 2004  
1...567891011...15

下载PDF

与H0500KC25L相关器件

型号 品牌 描述 获取价格 数据表
H0500KC25M IXYS Symmetrical GTO SCR, 280A I(T)RMS, 2500V V(DRM), 1000V V(RRM), 1 Element

获取价格
H0500KC25N IXYS Silicon Controlled Rectifier, 280 A, 2500 V, SYMMETRICAL GTO SCR

获取价格
H0500KC25P IXYS Symmetrical GTO SCR, 280A I(T)RMS, 2500V V(DRM), 750V V(RRM), 1 Element

获取价格
H0500KC25R IXYS Silicon Controlled Rectifier, 280 A, 2500 V, SYMMETRICAL GTO SCR

获取价格
H0500KC25S IXYS Symmetrical GTO SCR, 280A I(T)RMS, 2500V V(DRM), 500V V(RRM), 1 Element

获取价格
H0500KC25T IXYS Symmetrical GTO SCR, 280A I(T)RMS, 2500V V(DRM), 375V V(RRM), 1 Element

获取价格

与H0500KC25L相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证