Datasheet > H02N60E

H02N60E

更新时间： 2024-02-13 16:15:40

品牌	Logo	应用领域
HSMC		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
6页	78K
描述
N-Channel Power Field Effect Transistor

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

H02N60E 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

H02N60E 数据手册

Spec. No. : MOS200403

Issued Date : 2004.07.01

Revised Date : 2005.07.14

Page No. : 2/6

HI-SINCERITY

MICROELECTRONICS CORP.

Thermal Characteristics

Symbol

Parameter

Value

TO-251 / TO-252

Units

Thermal Resistance Junction to Case Max.

Thermal Resistance Junction to Ambient Max.

TO-220AB

TO-220FP

R_θJC

°C/W

3.3

62.5

R_θJA

ELectrical Characteristics (Tj=25°C, unless otherwise specified)

Symbol

V_(BR)DSS

Characteristic

Min.

Typ. Max.

Unit

Drain-Source Breakdown Voltage (V_GS=0V, I_D=250uA)

Drain-Source Leakage Current (V_DS=600V, V_GS=0V)

Drain-Source Leakage Current (V_DS=480V, V_GS=0V, T_j=125°C)

Gate-Source Leakage Current-Forward (V_gsf=20V, V_DS=0V)

Gate-Source Leakage Current-Reverse (V_gsr=-20V, V_DS=0V)

Gate Threshold Voltage (V_DS=V_GS, I_D=250uA)

Static Drain-Source On-Resistance (V_GS=10V, I_D=1A)*

Forward Transconductance (V_DS≥50V, I_D=1A)*

Input Capacitance

600

I_DSS

I_GSSF

I_GSSR

V_GS(th)

R_DS(on)

g_FS

100

-100

4.4

Ω

mhos

C_iss

C_oss

C_rss

t_d(on)

t_r

435

9.2

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Rise Time

V_GS=0V, V_DS=25V, f=1MHz

(V_DD=300V, I_D=2A, R_G=18Ω,

V_GS=10V)*

t_d(off)

t_f

Turn-off Delay Time

Fall Time

Q_g

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Q_gs

(V_DS=300V, I_D=6A, V_GS=10V)*

Q_gd

Internal Drain Inductance (Measured from the drain lead 0.25” from

package to center of die)

L_D

L_S

4.5

7.5

Internal Drain Inductance (Measured from the drain lead 0.25” from

package to source bond pad)

*: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%

Source-Drain Diode

Symbol

Characteristic

I_S=2A, V_GS=0V, T_J=25^oC

Min.

Typ. Max. Units

V_SD

t_on

t_rr

Forward On Voltage(1)

Forward Turn-On Time

Reverse Recovery Time

1.6

I_S=2A, V_GS=0V, d_IS/d_t=100A/us

340

**: Negligible, Dominated by circuit inductance

H02N60I, H02N60J, H02N60E, H02N60F

HSMC Product Specification

123 4 5 6

下载PDF

与H02N60E相关器件

型号	品牌	描述	获取价格	数据表
H02N60F	HSMC	N-Channel Power Field Effect Transistor	获取价格
H02N60I	HSMC	N-Channel Power Field Effect Transistor	获取价格
H02N60J	HSMC	N-Channel Power Field Effect Transistor	获取价格
H02N60S	HSMC	N-Channel Power Field Effect Transistor	获取价格
H02N60SE	HSMC	N-Channel Power Field Effect Transistor	获取价格
H02N60SF	HSMC	N-Channel Power Field Effect Transistor	获取价格