Datasheet > H02N60S

H02N60S

更新时间： 2024-02-28 10:24:50

品牌	Logo	应用领域
HSMC		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
6页	78K
描述
N-Channel Power Field Effect Transistor

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技术参数
数据手册

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H02N60S 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

H02N60S 数据手册

Spec. No. : MOS200504

Issued Date : 2005.05.01

Revised Date : 2005.09.28

Page No. : 1/6

HI-SINCERITY

MICROELECTRONICS CORP.

H02N60S Series Pin Assignment

H02N60S Series

3-Lead Plastic TO-252

Tab

Package Code: J

Pin 1: Gate

N-Channel Power Field Effect Transistor

Pin 2 & Tab: Drain

Pin 3: Source

Tab

3-Lead Plastic TO-251

Description

Package Code: I

Pin 1: Gate

This high voltage MOSFET uses an advanced termination scheme to

provide enhanced voltage-blocking capability without degratding

performance over time. In addition, this advanced MOSFET is designed to

withstand high energy in avalanche and commutation modes. The new

energy efficient design also offers a drain-to-source diode with a fast

recovery time. Designed for high voltage, high speed switching

applications in power supplies, converters and PWM motor controls,

these devices are particularly well suited for bridge circuits where diode

speed and commutating safe operating areas are critical and offer

additional and saafety margin against unexpected voltage transients.

Pin 2 & Tab: Drain

Pin 3: Source

Tab

3-Lead Plastic TO-220AB

Package Code: E

Pin 1: Gate

Pin 2 & Tab: Drain

Pin 3: Source

3-Lead Plastic TO-220FP

Package Code: F

Pin 1: Gate

Pin 2: Drain

Pin 3: Source

Features

• Robust High Voltage Termination

• Avalanc he Energy Specified

• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast

Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• I_DSSand V_DS(on)Specified at Elevated Temperature

H02N60S Series

Symbol:

Absolute Maximum Ratings

Symbol

I_D

Parameter

Drain to Current (Continuous)

Value

Units

I_DM

Drain to Current (Pulsed)

V_GS

Gate-to-Source Voltage (Continue)

Total Power Dissipation (T_C=25^oC)

H02N60SI (TO-251) / H02N60SJ (TO-252)

H02N60SE (TO-220AB)

±30

H02N60SF (TO-220FP)

P_D

Derate above 25°C

0.4

H02N60SI (TO-251) / H02N60SJ (TO-252)

H02N60SE (TO-220AB)

W/°C

0.33

H02N60SF (TO-220FP)

T_j, T_stg

E_AS

Operating and Storage Temperature Range

-55 to 150

°C

Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C

(V_DD=100V, V_GS=10V, I_L=2A, L=10mH, R_G=25Ω)

Maximum Lead Temperature for Soldering Purposes, 1/8”

from case for 10 seconds

T_L

260

°C

H02N60SI, H02N60SJ, H02N60SE, H02N60SF

HSMC Product Specification

12 3 4 5 6

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