GS8160F18/32/36T-5.5/6/6.5/7/7.5/8.5
5.5 ns–8.5 ns
100-Pin TQFP
Commercial Temp
Industrial Temp
1M x 18, 512K x 32, 512K x 36
18Mb Sync Burst SRAMs
2.5 V or 3.3 V V
DD
2.5 V or 3.3 V I/O
interleave order with the Linear Burst Order (LBO) input. The
Burst function need not be used. New addresses can be loaded
on every cycle with no degradation of chip performance.
Features
• Flow Through mode operation; Pin 14 = No Connect
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
Designing For Compatibility
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
The JEDEC standard for Burst RAMS calls for a FT mode pin
option on Pin 14. Board sites for flow through Burst RAMS
should be designed with V connected to the FT pin location
SS
to ensure the broadest access to multiple vendor sources.
Boards designed with FT pin pads tied low may be stuffed with
GSI’s pipeline/flow through-configurable Burst RAMs or any
vendor’s flow through or configurable Burst SRAM. Boards
designed with the FT pin location tied high or floating must
employ a non-configurable flow through Burst RAM, like this
RAM, to achieve flow through functionality.
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP package
Functional Description
Applications
The GS8160F18/32/36T is an 18,874,368-bit (16,777,216-bit
for x32 version) high performance synchronous SRAM with a
2-bit burst address counter. Although of a type originally
developed for Level 2 Cache applications supporting high
performance CPUs, the device now finds application in
synchronous SRAM applications, ranging from DSP main
store to networking chip set support.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
Controls
Sleep Mode
Addresses, data I/Os, chip enables (E1, E2, E3), address burst
control inputs (ADSP, ADSC, ADV), and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
cycles can be initiated with either ADSP or ADSC inputs. In
Burst mode, subsequent burst addresses are generated
internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS8160F18/32/36T operates on a 2.5 V or 3.3 V power
supply. All input are 3.3 V and 2.5 V compatible. Separate
output power (V
) pins are used to decouple output noise
DDQ
from the internal circuits and are 3.3 V and 2.5 V compatible.
Parameter Synopsis
-5.5 -6 -6.5 -7 -7.5 -8.5 Unit
Flow
Through
2-1-1-1
tKQ
5.5
5.5
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.5
8.5
ns
ns
tCycle
Curr (x18)
Curr (x32/x36) 200
175
165
190
160
180
150
170
145 135
165 150
mA
mA
3.3 V
2.5 V
Curr (x18) 175
Curr (x32/x36) 200
165
190
160
180
150
170
145 135
165 150
mA
mA
Rev: 2.12 11/2004
1/22
© 1999, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
5秒后页面跳转
NTC热敏电阻与PTC热敏电阻的应用原理及应用范围
GTO与普通晶闸管相比为什么可以自关断？为什么普通晶闸管不能呢？从GTO原理、应用范围带你了解原因及推荐型号
LF353数据手册解读：特性、应用、封装、引脚说明、电气参数及替换型号推荐
A4950资料手册解读：特性、应用、封装、引脚功能、电气参数及代换型号
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
