GS8128218/36(GB/GD)-xxxV
119- & 165-Bump BGA
Commercial Temp
Industrial Temp
333 MHz–200 MHz
8M x 18, 4M x 36
144Mb S/DCD Sync Burst SRAMs
1.8 V or 2.5 V V
DD
1.8 V or 2.5 V I/O
Flow Through/Pipeline Reads
Features
The function of the Data Output register can be controlled by the
user via the FT mode . Holding the FT mode pin low places the
RAM in Flow Through mode, causing output data to bypass the
Data Output Register. Holding FT high places the RAM in
Pipeline mode, activating the rising-edge-triggered Data Output
Register.
• FT pin for user-configurable flow through or pipeline operation
• Single/Dual Cycle Deselect selectable
• IEEE 1149.1 JTAG-compatible Boundary Scan
• ZQ mode pin for user-selectable high/low output drive
• 1.8 V +10%/–10% core power supply
• 2.5 V +10%/–10% core power supply
• 1.8 V or 2.5 V I/O supply
SCD and DCD Pipelined Reads
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to SCD x18/x36 Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
The GS8128218/36 is a SCD (Single Cycle Deselect) and DCD
(Dual Cycle Deselect) pipelined synchronous SRAM. DCD
SRAMs pipeline disable commands to the same degree as read
commands. SCD SRAMs pipeline deselect commands one stage
less than read commands. SCD RAMs begin turning off their
outputs immediately after the deselect command has been
captured in the input registers. DCD RAMs hold the deselect
command for one full cycle and then begin turning off their
outputs just after the second rising edge of clock. The user may
configure this SRAM for either mode of operation using the SCD
mode input.
• ZZ pin for automatic power-down
• RoHS-compliant 119-bump and 165-bump BGA packages
Functional Description
Applications
The GS8128218/36 is a 150,994,944-bit high performance
synchronous SRAM with a 2-bit burst address counter. Although
of a type originally developed for Level 2 Cache applications
supporting high performance CPUs, the device now finds
application in synchronous SRAM applications, ranging from
DSP main store to networking chip set support.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write control
inputs.
Controls
Addresses, data I/Os, chip enable (E1), address burst control
FLXDrive™
inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW,
GW) are synchronous and are controlled by a positive-edge-
triggered clock input (CK). Output enable (G) and power down
control (ZZ) are asynchronous inputs. Burst cycles can be initiated
with either ADSP or ADSC inputs. In Burst mode, subsequent
burst addresses are generated internally and are controlled by
ADV. The burst address counter may be configured to count in
either linear or interleave order with the Linear Burst Order (LBO)
input. The Burst function need not be used. New addresses can be
loaded on every cycle with no degradation of chip performance.
The ZQ pin allows selection between high drive strength (ZQ low)
for multi-drop bus applications and normal drive strength (ZQ
floating or high) point-to-point applications. See the Output Driver
Characteristics chart for details.
Core and Interface Voltages
The GS8128218/36 operates on a 1.8 V or 2.5 V power supply.
All input are 1.8 V or 2.5 V compatible. Separate output power
(VDDQ) pins are used to decouple output noise from the internal
circuits and are 1.8 V or 2.5 V compatible.
Parameter Synopsis
-333
2.5
3.0
-250
-200
Unit
tKQ
tCycle
2.5
4.0
3.0
5.0
ns
ns
Pipeline
3-1-1-1
Curr (x18)
Curr (x32/x36)
530
580
430
460
360
390
mA
mA
tKQ
tCycle
4.5
4.5
5.5
5.5
6.5
6.5
ns
ns
Flow Through
2-1-1-1
Curr (x18)
Curr (x32/x36)
400
420
360
380
285
320
mA
mA
Rev: 1.01 5/2017
1/34
© 2015, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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