Datasheet > GS1003FL

GS1003FL

更新时间： 2022-10-12 17:01:34

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圣诺 - SENO		/
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描述
1.0A SURFACE MOUNT GLASS PASSIVATED DIODE

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GS1003FL 数据手册

Zibo Seno Electronic Engineering Co., Ltd.

GS1000FL – GS1010FL

1.0A SURFACE MOUNT GLASS PASSIVATED DIODE

Features

Glass passivated device

Ideally Suited for Automatic Assembly

Low Forward Voltage Drop, High Efficiency

Surge Overload Rating to 2 5 A Peak

Low Power Loss

SOD - 123FL

Cathode Band

Top View

Ultra-Fast Recovery Time

Plastic Case Material has UL Flammability

Classification Rating 94V-O

2.8±0.1

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Mechanical Data

0.6±0.25

Case: SOD-123FL, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

3.7±0.2

Weight: 0.01 grams (approx.)

Lead Free: For RoHS / Lead Free Version

Dimensions in millimeters

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

GS10 GS10 GS10 GS10 GS10 GS10 GS10

Characteristic

Symbol

UNITS

00FL 01FL 02FL 04FL 06FL 08FL

10FL

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

100

200

140

400

600

420

800

560

1000

RMS Reverse Voltage

V^R(RMS)

I^O

280

1.0

800

Average Rectified Output Current

@T_L= 100°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

1.1

Forward Voltage

@I_F= 1.0A

V^FM

I^RM

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

500

µA

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

C^j

°C/W

°C

R^ꢀ^JL

Operating and Storage Temperature Range

T^j,T^STG

-65 to +150

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A. See figure 5.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. Mounted on P.C. Board with 8.0mm²land area.

GS1000FL – GS1010FL

www.senocn.com

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