Datasheet > GP30A/60-E3

GP30A/60-E3

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	289K
描述
DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

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GP30A/60-E3 数据手册

GP30A thru GP30M

Vishay General Semiconductor

100

TJ = 25 °C

Pulse Width = 300 µs

1% Duty Cycle

TJ = 25 °C

f = 1.0 MHz

V^sig= 50mVp-p

0.1

0.6

100

0.7

0.8

0.9

1.0

1.1

1.2

1.3

Reverse Voltage (V)

Instantaneous Forward Voltage (V)

Figure 3. Typical Instantaneous Forward Characteristics

Figure 5. Typical Junction Capacitance

TJ = 125 °C

TJ = 75 °C

0.1

TJ = 25 °C

0.01

100

Percent of Rated Peak Reverse Voltage (%)

Figure 4. Typical Reverse Characteristics

Package outline dimensions in inches (millimeters)

DO-201AD

1.0 (25.4)

Min.

0.210 (5.3)

0.190 (4.8)

Dia.

0.375 (9.5)

0.285 (7.2)

1.0 (25.4)

Min.

0.052 (1.32)

0.048 (1.22)

Dia.

Document Number 88640

13-Sep-05

www.vishay.com

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