Datasheet > GP30A/54-E3

GP30A/54-E3

更新时间： 2023-05-15 00:00:00

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	289K
描述
DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

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GP30A/54-E3 数据手册

GP30A thru GP30M

Vishay General Semiconductor

Electrical Characteristics

(T_A= 25 °C unless otherwise noted)

Parameter

Maximum

Test condition

at 3.0 A

Symbol GP30A GP30B GP30D GP30G GP30J GP30K GP30M Unit

V_F

1.2

1.1

instantaneous

forward voltage

Maximum reverse

current at rated DC

blocking voltage

_A= 25 °C

I_R

5.0

100

µA

T_A= 125 °C

Maximum reverse

recovery time

I_F= 0.5 A, I_R= 1.0 V,

t_rr

5.0

µs

I_rr= 0.25 A

Typical junction

capacitance

at 4.0 V, 1 MHz

C_J

Thermal Characteristics

(T_A= 25 °C unless otherwise noted)

Parameter

Symbol GP30A GP30B GP30D GP30G GP30J GP30K GP30M Unit

Typical thermal resistance⁽¹⁾

R_θJA

R_θJL

°C/W

Notes:

(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted

Ratings and Characteristics Curves

(T_A= 25 °C unless otherwise noted)

200

100

4.0

3.0

TJ = TJ max.

8.3 ms Single Half Sine-Wave

60 Hz

Resistive or

Inductive Load

2.0

1.0

0.375” (9.5mm) Lead Length

100

125

150

175

Ambient Temperature, °C

Number of Cycles at 60 Hz

Figure 1. Forward Current Derating Curve

Figure 2. Maximum Non-Repetitive Peak Forward Surge Current

www.vishay.com

Document Number 88640

13-Sep-05

123 4

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