5秒后页面跳转
GNDQ PDF预览

GNDQ

更新时间: 2022-04-30 08:11:58
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
212页 10501K
描述
Military ProASIC3/EL Low Power Flash FPGAs with Flash*Freeze Technology

GNDQ 数据手册

 浏览型号GNDQ的Datasheet PDF文件第2页浏览型号GNDQ的Datasheet PDF文件第3页浏览型号GNDQ的Datasheet PDF文件第4页浏览型号GNDQ的Datasheet PDF文件第5页浏览型号GNDQ的Datasheet PDF文件第6页浏览型号GNDQ的Datasheet PDF文件第7页 
Revision 3  
Military ProASIC3/EL Low Power Flash FPGAs  
with Flash*Freeze Technology  
Architecture Supports Ultra-High Utilization  
Features and Benefits  
Advanced and Pro (Professional) I/Os††  
Military Temperature Tested and Qualified  
700 Mbps DDR, LVDS-Capable I/Os  
1.2 V, 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation  
Bank-Selectable I/O Voltages—up to 8 Banks per Chip  
Each Device Tested from –55°C to 125°C  
Firm-Error Immune  
Single-Ended I/O Standards: LVTTL, LVCMOS 3.3 V /  
2.5 V / 1.8 V / 1.5 V / 1.2 V, 3.3 V PCI / 3.3 V PCI-X, and  
Not Susceptible to Neutron-Induced Configuration Loss  
Low Power  
LVCMOS 2.5 V / 5.0 V Input  
Dramatic Reduction in Dynamic and Static Power  
1.2 V to 1.5 V Core and I/O Voltage Support for Low Power  
Differential I/O Standards: LVPECL, LVDS, BLVDS, and M-LVDS  
Voltage-Referenced I/O Standards: GTL+ 2.5 V / 3.3 V, GTL  
2.5 V / 3.3 V, HSTL Class I and II, SSTL2 Class I and II, SSTL3  
Class I and II (A3PE3000L only)  
Low Power Consumption in Flash*Freeze Mode Allows for  
Instantaneous Entry To / Exit From Low-Power Flash*Freeze  
ƒ
Mode  
I/O Registers on Input, Output, and Enable Paths  
Hot-Swappable and Cold-Sparing I/Os  
Programmable Output Slew Rate and Drive Strength  
Programmable Input Delay (A3PE3000L only)  
Schmitt Trigger Option on Single-Ended Inputs (A3PE3000L)  
Weak Pull-Up/-Down  
Supports Single-Voltage System Operation  
Low-Impedance Switches  
High Capacity  
250K to 3M System Gates  
Up to 504 kbits of True Dual-Port SRAM  
Up to 620 User I/Os  
IEEE 1149.1 (JTAG) Boundary Scan Test  
Pin-Compatible Packages across the Military ProASIC 3EL Family  
®
Reprogrammable Flash Technology  
Clock Conditioning Circuit (CCC) and PLL  
130-nm, 7-Layer Metal (6 Copper), Flash-Based CMOS Process  
Live-at-Power-Up (LAPU) Level 0 Support  
Single-Chip Solution  
Six CCC Blocks—One Block with Integrated PLL in ProASIC3  
and All Blocks with Integrated PLL in ProASIC3EL  
Configurable Phase Shift, Multiply/Divide, Delay Capabilities,  
and External Feedback  
Wide Input Frequency Range 1.5 MHz to 250 MHz (1.2 V  
systems) and 350 MHz (1.5 V systems)  
Retains Programmed Design when Powered Off  
High Performance  
350 MHz (1.5 V systems) and 250 MHz (1.2 V systems) System  
Performance  
3.3 V, 66 MHz, 64-Bit PCI (1.5 V systems) and 66 MHz, 32-Bit  
PCI (1.2 V systems)  
SRAMs and FIFOs  
Variable-Aspect-Ratio 4,608-Bit RAM Blocks (×1, ×2, ×4, ×9,  
and ×18 organizations available)  
True Dual-Port SRAM (except ×18)  
24 SRAM and FIFO Configurations with Synchronous  
Operation:  
– 250 MHz: For 1.2 V Systems  
– 350 MHz: For 1.5 V Systems  
In-System Programming (ISP) and Security  
Secure ISP Using On-Chip 128-Bit Advanced Encryption  
Standard (AES) Decryption via JTAG (IEEE 1532–compliant)  
®
FlashLock to Secure FPGA Contents  
High-Performance Routing Hierarchy  
ARM® Processor Support in ProASIC3/EL FPGAs  
Segmented, Hierarchical Routing and Clock Structure  
High-Performance, Low-Skew Global Network  
ARM Cortex™-M1 Soft Processor Available with or without  
Debug  
Table 1 • Military ProASIC3/EL Low-Power Devices  
ProASIC3/EL Devices  
ARM Cortex-M1 Devices  
System Gates  
A3P250  
A3PE600L  
A3P1000  
A3PE3000L  
1
M1A3P1000  
M1A3PE3000L  
250,000  
600,000  
13,824  
108  
24  
1M  
24,576  
144  
32  
3M  
75,264  
504  
112  
1
VersaTiles (D-flip-flops)  
RAM kbits (1,024 bits)  
4,608-Bit Blocks  
6,144  
36  
8
FlashROM Kbits  
1
1
1
2
Secure (AES) ISP  
Yes  
1
Yes  
6
Yes  
1
Yes  
6
Integrated PLL in CCCs  
VersaNet Globals  
I/O Banks  
18  
4
18  
18  
18  
8
4
8
Maximum User I/Os  
68  
270  
154  
620  
Package Pins  
VQFP  
VQ100  
PQFP  
PQ208  
FG144, FG484  
FBGA  
FG484  
FG484, FG896  
Notes:  
1. Refer to the Cortex-M1 product brief for more information.  
2. AES is not available for ARM-enabled ProASIC3/EL devices.  
† A3P250 and A3P1000 support only 1.5 V core operation.  
ƒ Flash*Freeze technology is not available for A3P250 or A3P1000.  
††Pro I/Os are not available on A3P250 or A3P1000.  
September 2012  
I
© 2011 Microsemi Corporation  

与GNDQ相关器件

型号 品牌 获取价格 描述 数据表
GNE1007TB ROHM

获取价格

GNE1007TB is an 8V Gate Source Voltage 150V GaN HEMT. It is a product of the EcoGaN™
GNE1008TB ROHM

获取价格

GNE1008TB is an 8V Gate Source Voltage 150V GaN HEMT. It is a product of the EcoGaN™
GNE1015TB ROHM

获取价格

GNE1015TB is an 8V Gate Source Voltage 150V GaN HEMT. It is a product of the EcoGaN™
GNE1040TB ROHM

获取价格

GNE1040TB是栅极耐压高达8V的150V GaN HEMT。该产品属于EcoGaN™
GNF1R250 ETC

获取价格

CAP TRIMMER 0.3-1.2PF 500V TH
GNF2R500 ETC

获取价格

CAP TRIMMER 0.4-2.5PF 500V TH
GNF2R550 ETC

获取价格

CAP TRIMMER 0.4-2.5PF 500V TH
GNF4R550 ETC

获取价格

CAP TRIMMER 0.6-4.5PF 500V TH
GNF8R000 ETC

获取价格

CAP TRIMMER 0.8-8PF 500V TH
GNF8R050 ETC

获取价格

CAP TRIMMER 0.8-8PF 500V TH