Datasheet > GMBD2004

GMBD2004

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		二极管开关
页数	文件大小	规格书
2页	336K
描述
SURFACE MOUNT,SWITCHING DIODE

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数据手册

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GMBD2004 数据手册

ISSUED DATE :2002/11/12

REVISED DATE :2004/11/30B

GTM

CORPORATION

GMBD2004\A\C\S

S U R F A C E M O U N T, S W I T C H I N G D I O D E

V O LT AG E 3 0 0 V, C U R R E N T 0 . 2 2 5 A

Description

he GMBD2004\A\C\S are general purpose diodes fabricated in planar technology, and encapsulated in small plastic SMD SOT-23

package,

Package Dimensions

TPU.34)QBDLBHF*

Style: Pin1: Anode, 2: No Connection, 3: Cathode

Millimeter

REF.

Min.

Max.

3.10

2.80

1.60

0.50

0.10

0.55

Min.

Max.

2.70

2.40

1.40

0.35

1.90 REF.

1.00

0.10

0.40

0.85

0̓

1.30

0.20

1.15

10̓

0.45

Absolute Maximum Ratings at Ta = 25к unless otherwise specified

Parameter

Repetitive Peak Reverse Voltage

Continuous reverse voltage

RMS Reverse Voltage

Symbol

Ratings

Unit

RRM

300

240

VR(VRWM

)

VR(RMS

IFM

)

170

Forward Continuous Current

225

Non-Repetitive Peak Forward surge Current @t =1.0us

@t=1.0s

IFSM

Power Dissipation

350

ć/W

Thermal Resistance Junction to Ambient Air

Storage Temperature Range

ꢀJA

357

Tj,Tstg

-65 ~ +150

Characteristics at Ta = 25к unless otherwise specified

Characteristics

Symbol

Min.

Max.

0.85

Unit

Test Conditions

IF = 20mA

Forward Voltage

IF = 100mA

IF = 225mA

VR = 240V

1.25

Reverse Current

100

VR = 240V ,Tj=150ć

Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 0 volt.

2. Measured at applied forward current of 30mA, reverse current of 30mA, R_L=100Ө and recovery to I_RR=-3mA.

3. ESD sensitive product handling required.

GMBD2004\A\C\S

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