ISSUED DATE :2002/11/12
REVISED DATE :2004/11/30B
GTM
CORPORATION
GMBD2004\A\C\S
S U R F A C E M O U N T, S W I T C H I N G D I O D E
V O LT AG E 3 0 0 V, C U R R E N T 0 . 2 2 5 A
Description
T
he GMBD2004\A\C\S are general purpose diodes fabricated in planar technology, and encapsulated in small plastic SMD SOT-23
package,
Package Dimensions
TPU.34)QBDLBHF*
Style: Pin1: Anode, 2: No Connection, 3: Cathode
Millimeter
Millimeter
REF.
REF.
Min.
Max.
3.10
2.80
1.60
0.50
0.10
0.55
Min.
Max.
A
B
C
D
E
F
2.70
2.40
1.40
0.35
0
G
H
K
J
L
M
1.90 REF.
1.00
0.10
0.40
0.85
0̓
1.30
0.20
-
1.15
10̓
0.45
Absolute Maximum Ratings at Ta = 25к unless otherwise specified
Parameter
Repetitive Peak Reverse Voltage
Continuous reverse voltage
RMS Reverse Voltage
Symbol
Ratings
Unit
V
RRM
300
240
V
V
VR(VRWM
)
VR(RMS
IFM
)
170
V
Forward Continuous Current
225
mA
4
Non-Repetitive Peak Forward surge Current @t =1.0us
@t=1.0s
IFSM
A
1
Power Dissipation
PD
350
mW
ć/W
ć
Thermal Resistance Junction to Ambient Air
Storage Temperature Range
R
ꢀJA
357
Tj,Tstg
-65 ~ +150
Characteristics at Ta = 25к unless otherwise specified
Characteristics
Symbol
Min.
Max.
0.85
1
Unit
Test Conditions
V
V
IF = 20mA
Forward Voltage
VF
-
-
IF = 100mA
IF = 225mA
VR = 240V
1.25
V
nA
uA
Reverse Current
IR
-
100
VR = 240V ,Tj=150ć
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 0 volt.
2. Measured at applied forward current of 30mA, reverse current of 30mA, RL=100Ө and recovery to IRR=-3mA.
3. ESD sensitive product handling required.
GMBD2004\A\C\S
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