Datasheet > GMBD3004

GMBD3004

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		二极管开关
页数	文件大小	规格书
2页	427K
描述
SURFACE MOUNT,SWITCHING DIODE

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数据手册

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GMBD3004 数据手册

ISSUED DATE :2004/03/23

REVISED DATE :

GTM

CORPORATION

GMBD3004\A\C\S

S U R F A C E M O U N T, S W I T C H I N G D I O D E

V O LT AG E 3 5 0 V, C U R R E N T 0 . 2 2 5 A

Description

The GMBD3004\A\C\S are designed for ultra high speed switching.

Package Dimensions

TPU.34)QBDLBHF*

Millimeter

REF.

Min.

Max.

3.10

2.80

1.60

0.50

0.10

0.55

Min.

Max.

2.70

2.40

1.40

0.35

1.90 REF.

1.00

0.10

0.40

0.85

0̓

1.30

0.20

1.15

10̓

0.45

Absolute Maximum Ratings (At T

Parameter

A = 25к unless otherwise specified)

Symbol

Ratings

Unit

Max. Repetitive Peak Reverse Voltage

Max. RMS Voltage

RRM

RMS

350

212

300

225

Max. DC Blocking Voltage

Max. Average Forward Rectified Current

Non-Repetitive Peak Forward surge Current @Tp =1.0us

@Tp=1.0s

IFSM

Typical Junction Capacitance between Terminal (Note1)

Max. Reverse Recovery Time (Note2)

Power Dissipation

5.0

nSec

ć/W

350

357

-65 ~ +150

Thermal Resistance Junction to Ambient Air

Operation and Storage Temperature Range

ꢀJA

, TSTG

Electrical Characteristics (At TA = 25к unless otherwise noted)

Characteristics

Symbol

Min.

350

Max.

Unit

Test Conditions

Reverse Breakdown Voltage

Max. instantaneous Forward Voltage

=150uA

= 100mA

1.0

100

VR = 240V, T

=25ć

Max. Average Reverse Current

=150ć

Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 0 volts.

2. Measured at applied forward current of 30mA, reverse current of 30mA, R_L=100Ө and recovery to I_RR=-3mA.

3. ESD sensitive product handling required.

GMBD3004\A\C\S

Page: 1/2

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