Datasheet > GMBD1201-A-C-S

GMBD1201-A-C-S

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		二极管开关
页数	文件大小	规格书
3页	296K
描述
SURFACE MOUNT,SWITCHING DIODE

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数据手册

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GMBD1201-A-C-S 数据手册

ISSUED DATE :2005/07/01

REVISED DATE :

GTM

CORPORATION

GMBD1201\A\C\S

S U R F A C E M O U N T, S W I T C H I N G D I O D E

V O LT AG E 1 0 0 V, C U R R E N T 2 0 0 m A

Description

The GMBD1201\A\C\S are general purpose for small signal diodes.

Package Dimensions

TPU.34)QBDLBHF*

Millimeter

REF.

Min.

Max.

3.10

2.80

1.60

0.50

0.10

0.55

Min.

Max.

2.70

2.40

1.40

0.35

1.90 REF.

1.00

0.10

0.40

0.85

0̓

1.30

0.20

1.15

10̓

0.45

Absolute Maximum Ratings (T

Parameter

Max. Repetitive Reverse Voltage

Average Rectified Forward Current

A = 25к)

Symbol

Ratings

100

200

Unit

VRRM

F(AV)

Non-Repetitive Peak Forward surge Current @1s

FSM

@1ms

Power Dissipation

350

357

-55 ~ +150

+150

к/W

Thermal Resistance Junction to Ambient Air

Storage Temperature Range

Operating Junction Temperature

ꢀJA

STG

Electrical Characteristics (T

= 25к)

Characteristics

Symbol Min.

Typ. Max. Unit

Test Conditions

R=100uA

700

800

1.1

1.2

1.3

Breakdown Voltage

100

Forward Voltage

Reverse Current

800

900

1.2

1.3

1.4

=1mA

=10mA

=100mA

=200mA

=300mA

=20V

=50V

=50V, TA=150к

5.0

2.0

4.0

Total Capacitance

Reverse Recovery Time

=0, f=1.0MHz

=10mA, IRR=1mA, R

=100ꢀ

GMBD1201\A\C\S

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