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GM76V256CLEFW-85 PDF预览

GM76V256CLEFW-85

更新时间: 2024-02-09 18:09:36
品牌 Logo 应用领域
海力士 - HYNIX 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
10页 136K
描述
Standard SRAM, 32KX8, 85ns, CMOS, PDSO28, 0.330 INCH, SOP-28

GM76V256CLEFW-85 技术参数

是否Rohs认证: 不符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.84
最长访问时间:85 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G28JESD-609代码:e0
内存密度:262144 bit内存集成电路类型:STANDARD SRAM
内存宽度:8端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-25 °C组织:32KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP28,.5
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL电源:3.3 V
认证状态:Not Qualified最大待机电流:0.00002 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.035 mA标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUALBase Number Matches:1

GM76V256CLEFW-85 数据手册

 浏览型号GM76V256CLEFW-85的Datasheet PDF文件第1页浏览型号GM76V256CLEFW-85的Datasheet PDF文件第2页浏览型号GM76V256CLEFW-85的Datasheet PDF文件第4页浏览型号GM76V256CLEFW-85的Datasheet PDF文件第5页浏览型号GM76V256CLEFW-85的Datasheet PDF文件第6页浏览型号GM76V256CLEFW-85的Datasheet PDF文件第7页 
GM76V256C Series  
ORDERING INFORMATION  
Part No.  
GM76V256CL  
GM76V256CLL  
Speed  
85/100  
85/100  
85/100  
85/100  
85/100  
85/100  
85/100  
85/100  
85/100  
85/100  
85/100  
85/100  
Power  
L-part  
LL-part  
L-part  
LL-part  
L-part  
LL-part  
L-part  
LL-part  
L-part  
LL-part  
L-part  
Temp  
Package  
PDIP  
PDIP  
PDIP  
PDIP  
SOP  
SOP  
SOP  
SOP  
0 to 70¡ É  
0 to 70¡ É  
-25 to 85¡ É  
-25 to 85¡ É  
0 to 70¡ É  
0 to 70¡ É  
-25 to 85¡ É  
-25 to 85¡ É  
0 to 70¡ É  
0 to 70¡ É  
-25 to 85¡ É  
-25 to 85¡ É  
GM76V256CLE  
GM76V256CLLE  
GM76V256CLFW  
GM76V256CLLFW  
GM76V256CLEFW  
GM76V256CLLEFW  
GM76V256CLT  
GM76V256CLLT  
GM76V256CLET  
GM76V256CLLET  
TSOP-I Standard  
TSOP-I Standard  
TSOP-I Standard  
TSOP-I Standard  
LL-part  
ABSOLUTE MAXIMUM RATING (1)  
Symbol  
Vcc, VIN, VOUT  
TA  
Parameter  
Power Supply, Input/Output Voltage  
Rating  
-0.3 to 4.6  
0 to 70  
-25 to 85  
-65 to 150  
1.0  
Unit  
V
°C  
°C  
°C  
Operating Temperature  
GM76V256C  
GM76V256CE  
TSTG  
PD  
Storage Temperature  
Power Dissipation  
W
IOUT  
TSOLDER  
Data Output Current  
Lead Soldering Temperature & Time  
50  
260 ·10  
mA  
°C·sec  
Note  
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent  
damage to the device. This is stress rating only and the functional operation of the device under these or  
any other conditions above those indicated in the operation of this specification is not implied.  
Exposure to the absolute maximum rating conditions for extended period may affect reliability.  
RECOMMENDED DC OPERATING CONDITIONS  
Symbol  
Vcc  
Vss  
VIH  
VIL  
Parameter  
Power Supply Voltage  
Ground  
Input High Voltage  
Input Low Voltage  
Min.  
3.0  
0
2.2  
-0.3(1)  
Typ.  
3.3  
0
-
-
Max.  
3.6  
0
Vcc+0.3  
0.4  
Unit  
V
V
V
V
Note  
1. VIL = -3.0V for pulse width less than 50ns  
TRUTH TABLE  
/CS  
H
L
L
L
/WE /OE  
Mode  
Standby  
Output Disabled High-Z  
I/O Operation  
High-Z  
X
H
H
L
X
H
L
Read  
Write  
Data Out  
Data In  
X
Note  
1. H=VIH, L=VIL, X=Don't Care  
Rev 00 / Jul. 2000  
2

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