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GM76C256CLLT-70 PDF预览

GM76C256CLLT-70

更新时间: 2024-01-08 23:29:49
品牌 Logo 应用领域
其他 - ETC 静态存储器
页数 文件大小 规格书
10页 81K
描述
x8 SRAM

GM76C256CLLT-70 技术参数

生命周期:Obsolete零件包装代码:TSOP
包装说明:LSSOP,针数:28
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.71
最长访问时间:150 ns其他特性:ALSO OPERATES WITH 5V SUPPLY
JESD-30 代码:R-PDSO-G28长度:11.8 mm
内存密度:262144 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:32KX8封装主体材料:PLASTIC/EPOXY
封装代码:LSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:1.22 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.55 mm
端子位置:DUAL宽度:8 mm
Base Number Matches:1

GM76C256CLLT-70 数据手册

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GM76C256CL/LL  
LG Semicon Co.,Ltd.  
32,768 WORDS x 8 BIT  
CMOS STATIC RAM  
Description  
Pin Configuration  
The GM76C256C family is a 262,144 bits static  
random access memory organized as 32,768 words  
by 8 bits. Using a 0.6um advanced CMOS tech-  
1
28  
27  
A14  
VCC  
2
3
4
5
6
A12  
A7  
/WE  
nology and operated a single 5.0V supply.  
.
26 A13  
Advanced circuit techniques provide both high  
speed and low power consumption. The Family  
can support various operating temerature ranges  
25  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
A8  
24  
A9  
23  
A11  
for user flexibility of system design.  
.
7
8
22 /OE  
21 A10  
20 /CS  
The Family has Chip select /CS, which allows for  
device selection and data retention control, and  
output enable (/OE), which provides fast memory  
access. Thus it is suitable for high speed and low  
power applications, particularly where battery  
9
10  
19  
I/O7  
I/O0 11  
18 I/O6  
back-up is required.  
.
12  
17  
I/O1  
I/O5  
I/O2 13  
VSS 14  
16 I/O4  
15 I/O3  
Features  
* High Speed : Fast Access and Cycle Time  
55/70ns Max  
(Top View)  
* Low Power Standby and Low Power Operation  
-Standby : 165uW at TA= -25 ~ 85C (LLE)  
110uW at TA= 0 ~ 70C (LL)  
Block Diagram  
-Operation : 385mW at Vcc=5.0V + 0.5V  
* Completely Static RAM : No Clock or Timing  
strobe required  
* Power Supply Voltage : 5.0V + 0.5V  
* Low Data Retention Voltage : 2.0V(Min)  
* Temperature Range  
A0  
A1  
A2  
MEMORY CELL ARRAY  
512 x 64 x 8  
9
512  
X
Decoder  
(32K x 8)  
Address  
Buffer  
-GM76C256CL/LL  
: ( 0 ~ 70C)  
-GM76C256CLE/LLE : (-25 ~ 85C)  
* Package Type : JEDEC Standard  
28-DIP,SOP,TSOP(I)  
64 x 8  
6
64  
A13  
Y
Column Select  
A14  
Decoder  
Pin Description  
8
Pin  
A0-A14  
/WE  
Function  
Address Inputs  
Write Enable Input  
Output Enable Input  
Chip Select Input  
Data Input/Output  
Power Supply  
Chip  
Control  
/CS  
/OE  
I/O  
Control  
/WE  
I/O Buffer  
/OE  
/CS  
I/O0-I/O7  
VCC  
VSS  
Ground  
33  

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