Datasheet > GM71VS16403CLJ-7

GM71VS16403CLJ-7

更新时间： 2022-01-18 22:10:00

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
10页	103K
描述
x4 EDO Page Mode DRAM

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数据手册

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GM71VS16403CLJ-7 数据手册

GM71V16403C

GM71VS16403CL

EDO Page Mode Cycle

GM71V(S)16403 GM71V(S)16403 GM71V(S)16403

C/CL-5 C/CL-6 C/CL-7

Unit Note

Symbol

Parameter

Min Max Min Max Min Max

HPC

EDO Page Mode Cycle Time

100,000

EDO Page Mode RAS Pulse Width

Access Time from CAS Precharge

RAS Hold Time from CAS Precharge

tRASP

9,17,19

tACP

tRHCP

tDOH

Output data Hold Time from CAS low

CAS Hold Time referred OE

CAS to OE Setup Time

COL

COP

Read command Hold Time

from CAS Precharge

RCHP

EDO Page Mode Read-Modify-Write Cycle

GM71V(S)16403 GM71V(S)16403 GM71V(S)16403

C/CL-5 C/CL-6 C/CL-7

Unit Note

Symbol

Parameter

Min Max Min Max Min Max

HPRWC

EDO Page Mode Read-Modify-Write

Cycle Time

tCPW

WE Delay Time from CAS Precharge

Test Mode Cycle ^*18

GM71V(S)16403 GM71V(S)16403 GM71V(S)16403

C/CL-5 C/CL-6 C/CL-7

Unit Note

Symbol

Parameter

Min Max Min Max Min Max

WTS

Test Mode WE Setup Time

Test Mode WE Hold Time

tWTH

Refresh

GM71V(S)16403 GM71V(S)16403 GM71V(S)16403

C/CL-5 C/CL-6 C/CL-7

Unit Note

Symbol

Parameter

Min Max Min Max Min Max

4096

REF

Refresh Period

cycles

4096

tREF

Refresh Period (L - version)

128

cycles

Rev0.1/Apr’01

1...4 5 678 9 10

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