Datasheet > GKU20N65EH3

GKU20N65EH3

更新时间： 2025-09-18 18:52:59

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		双极性晶体管
页数	文件大小	规格书
5页	521K
描述
20A, 650V, 142W, N Channel, IGBT

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数据手册

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GKU20N65EH3 数据手册

Trench FS IGBT Witch Full Rated Diode

GKU20N65EH3

Features



High breakdown voltage to 650V for improved reliability

Max junction temperature 175°C

Short Circuit Rated

Very low saturation voltage

Soft current turn-off waveforms

Applications



Soft switching applications

Air conditioning

Motor drive inverter

Mechanical Data



Case: TO-247

Molding Compound: UL Flammability Classification Rating 94V-0

TO-247

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

Ordering Information

Part Number

Package

TO-247

Shipping Quantity

Marking Code

GKU20N65EH3

30 pcs / Tube

KU20N65EH3

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Collector-to-Emitter Voltage

V_CES

V_GES

650

Gate-Emitter Voltage

±20

DC Collector Current (T_C= 25°C , limited by maximum T_J)

DC Collector Current (T_C= 100°C , limited by maximum T_J)

Diode Continuous Forward Current (T_C= 25°C , limited by maximum T_J)

Diode Continuous Forward Current (T_C= 100°C , limited by maximum T_J)

Pulsed Collector Current (Pulse width limited by maximum T_J,V_GE= 15V)

Short Circuit Withstand Time (V_GE= 15V, V_CE≤ 400V)

Soldering Temperature, Wave Soldering 1.6mm (0.063in.) from case for 10s

Power Dissipation (T_C= 25°C)

I_C

I_F

I_CM

T_SC

T_sold

P_D

μs

°C

260

142

Operating Junction Temperature Range

T_J

-55 ~ +175

Storage Temperature Range

T_STG

IGM0020A: April 2024 [2.0]

www.gmesemi.com

12 3 4 5

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