Datasheet > GKR24004_16

GKR24004_16

更新时间： 2025-08-31 00:58:47

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
3页	558K
描述
Silicon Standard Recovery Diode

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中文翻译

获取价格

数据手册

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GKR24004_16 数据手册

GKR240/04 thru GKR240/18

V_RRM= 400 V - 1800 V

I_F= 320 A

Silicon Standard

Recovery Diode

Features

• High Surge Capability

• Types from 400 V to 1800 V V_RRM

DO-9 Package

• Equivalent to SKR240 Series

• Not ESD Sensitive

GKR

Maximum ratings, at T_j= 25 °C, unless otherwise specified (GKN has leads reversed)

Conditions

GKR240/12 GKR240/14

GKR240/16GKR240/18Unit

Parameter

Symbol

GKR240/04 GKR240/08

V_RRM

V_DC

I_F

1200

320

1400

320

Repetitive peak reverse voltage

DC blocking voltage

400

320

800

320

1600

320

1800

320

T_C≤ 100 °C

Continuous forward current

Surge non-repetitive forward

current, Half Sine Wave

I_F,SMT_C= 25 °C, t_p= 10 ms

6000

T_j

-55 to 150 -55 to 150

Operating temperature

Storage temperature

-55 to 150 -55 to 150

-55 to 150 -55 to 150 °C

T_stg

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

GKR240/12 GKR240/14

Parameter

Symbol

GKR240/04 GKR240/08

GKR240/16GKR240/18Unit

V_F

I_R

I_F= 60 A, T_j= 25 °C

V_R= V_RRM, T_j= 25 °C

1.4

Diode forward voltage

Reverse current

1.4

Thermal characteristics

Thermal resistance, junction -

case

R_thJC

0.20

K/W

Feb 2016

Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/

12 3

中文翻译

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