Datasheet > GIT120N60E1

GIT120N60E1

更新时间： 2025-08-06 18:51:43

品牌	Logo	应用领域
固锝 - GOOD-ARK		双极性晶体管
页数	文件大小	规格书
9页	1331K
描述
单管IGBT

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中文翻译

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数据手册

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GIT120N60E1 数据手册

GIT120N60E1

GOOD-ARK Electronics

60A,1250V Insulated Gate Bipolar Transistor

Features

● Trench FS technology offering

● High speed switching

● Low gate charge and VCE(sat)

● High ruggedness, temperature stable behavior

● Maximum junction temperature 175°C

TO-247

Applications

● Solar Inverters

● Uninterruptible power supplies

● Motor drives

● Air condition

Absolute Maximum Ratings (@T_j=25°C unless otherwise noted)

Parameter

Symbol

Ratings

1250

±30

Unit

Collector-Emitter Voltage

V_CES

Gate- Emitter Voltage

V_GES

Collector Current

120

I_C

I_Cpuls

I_F

Collector Current @TC = 100 °C

Pulsed Collector Current, tp limited by Tjmax

Diode Continuous Forward Current @T_C= 25 °C

Diode Continuous Forward Current @T_C= 100 °C

Power Dissipation @ TC = 25°C

Power Dissipation @ TC = 100°C

Operating Junction

240

120

394

°C

P_D

197

T_J

-55 to +175

Storage Temperature Range

T_STG

www.goodark.com

Version: Rev.A

12 3 4 5 6 7...9

中文翻译

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