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GIB1403HE3/45 PDF预览

GIB1403HE3/45

更新时间: 2024-01-18 11:38:28
品牌 Logo 应用领域
威世 - VISHAY 功效二极管
页数 文件大小 规格书
5页 92K
描述
DIODE 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

GIB1403HE3/45 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.56
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT, HIGH RELIABILITY应用:EFFICIENCY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.8 VJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:125 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
认证状态:Not Qualified最大重复峰值反向电压:150 V
最大反向恢复时间:0.035 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40Base Number Matches:1

GIB1403HE3/45 数据手册

 浏览型号GIB1403HE3/45的Datasheet PDF文件第1页浏览型号GIB1403HE3/45的Datasheet PDF文件第2页浏览型号GIB1403HE3/45的Datasheet PDF文件第4页浏览型号GIB1403HE3/45的Datasheet PDF文件第5页 
GIB1401, GIB1402, GIB1403, GIB1404  
www.vishay.com  
Vishay General Semiconductor  
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)  
12  
10  
8
100  
10  
Resistive or Inductive Load  
TJ = 125 °C  
TJ = 100 °C  
Infinite Heatsink Mounting, TC  
6
1
Free Air Rating, TA  
P.C.B. Mounting  
4
0.1  
2
TJ = 25 °C  
40  
0
0.01  
0
25  
50  
75  
100  
125  
150  
0
20  
60  
80  
100  
Percent of Rated Peak Reverse Voltage (%)  
Case Temperature (°C)  
Fig. 1 - Max. Forward Current Derating Curve  
Fig. 4 - Typical Reverse Leakage Characteristics  
150  
125  
100  
75  
1000  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
TC = 125 °C  
8.3 ms Single Half Sine-Wave  
100  
50  
25  
0
10  
0.1  
1
10  
100  
1
10  
100  
Reverse Voltage (V)  
Number of Cycles at 60 Hz  
Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current  
Fig. 5 - Typical Junction Capacitance  
100  
TJ = 125 °C  
TJ = 25 °C  
10  
Pulse Width = 300 µs  
1 % Duty Cycle  
1
0.1  
0.01  
0.4  
0.6  
0.8  
1.0  
1.2  
Instantaneous Forward Voltage (V)  
Fig. 3 - Typical Instantaneous Forward Characteristics  
Revision: 23-Feb-16  
Document Number: 88632  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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