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GI910/56 PDF预览

GI910/56

更新时间: 2024-02-19 05:39:20
品牌 Logo 应用领域
威世 - VISHAY 功效二极管
页数 文件大小 规格书
4页 297K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

GI910/56 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DO-201AD包装说明:PLASTIC PACKAGE-2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.92其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT
应用:EFFICIENCY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-201AD
JESD-30 代码:O-PALF-W2JESD-609代码:e0
最大非重复峰值正向电流:100 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-50 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:50 V最大反向恢复时间:0.75 µs
表面贴装:NO端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

GI910/56 数据手册

 浏览型号GI910/56的Datasheet PDF文件第1页浏览型号GI910/56的Datasheet PDF文件第3页浏览型号GI910/56的Datasheet PDF文件第4页 
GI910 thru GI917  
Vishay General Semiconductor  
Electrical Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Maximum  
instantaneous  
forward voltage  
Test condition  
at 3.0 A  
at 9.4 A, TJ = 175 °C  
Symbol  
VF  
GI910  
GI911  
GI912  
GI914  
GI916  
GI917  
Unit  
V
1.25  
1.10  
MaximumDCreverse  
current at rated DC  
blocking voltage  
TA= 25 °C  
TA=100 °C  
IR  
10  
300  
µA  
ns  
Maximum reverse  
recovery time  
at IF = 1.0 A, VR = 30V,  
trr  
750  
2.0  
28  
di/dt = 50 A/µs,  
Irr = 10 % IRM  
Maximum reverse  
recovery time  
at IF = 1.0 A, VR = 30 V,  
IRM(REC)  
A
di/dt = 50 A/µs,  
Irr = 10 % IRM  
Typical junction  
capacitance  
at 4.0 V, 1 MHz  
CJ  
pF  
Thermal Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Typical thermal resistance (1)  
Symbol  
RθJA  
RθJL  
GI910  
GI911  
GI912  
GI914  
GI916  
GI917  
Unit  
22  
8.0  
°C/W  
Notes:  
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, with both leads equally heat sink  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise noted)  
200  
100  
4.0  
3.0  
2.0  
I(pk)  
0.375" (9.5mm)  
Lead Length  
= π  
8.3 ms Single Half Sine-Wave  
I(AV)  
Non-Repetitive  
TJ = 25 °C  
0.8 x 0.8 x 0.40"  
(20 x 20 x 1mm)  
Copper Heatsinks  
Capacitive Load  
TJ = 150 °C  
I(pk)  
5.0  
10  
20  
=
I(AV)  
1.0  
0
Repetitive  
10  
1
10  
Number of Cycles at 60 Hz  
100  
30  
50  
70  
90  
110  
130  
150  
170  
Ambient Temperature (°C)  
Figure 1. Forward Current Derating Curves  
Figure 2. Maximum Peak Forward Surge Current  
www.vishay.com  
2
Document Number 88631  
10-Oct-05  

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