Datasheet > GE13007

GE13007

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管
页数	文件大小	规格书
3页	304K
描述
NPN SILICON TRIPLE DIFFUSED MESA TYPE TRANSISTOR

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GE13007 数据手册

ISSUED DATE :2005/01/12

REVISED DATE :

GTM

CORPORATION

Important Notice:

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.

GTM reserves the right to make changes to its products without notice.

GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.

GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

Head Office And Factory:

Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.

TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785

China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China

TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165

GE13007

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型号	品牌	描述	获取价格	数据表
GE1301	ROCHESTER	6 A, 50 V, SILICON, RECTIFIER DIODE	获取价格
GE1302	RENESAS	RECTIFIER DIODE,100V V(RRM),AXIAL-B	获取价格
GE1303	ROCHESTER	6A, 150V, SILICON, RECTIFIER DIODE	获取价格
GE1303	RENESAS	RECTIFIER DIODE,150V V(RRM),AXIAL-B	获取价格
GE1304	ROCHESTER	6 A, 200 V, SILICON, RECTIFIER DIODE	获取价格
GE1304	RENESAS	RECTIFIER DIODE,200V V(RRM),AXIAL-B	获取价格