Datasheet > GE200NB60S

GE200NB60S

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
13页	275K
描述
N-CHANNEL 150A - 600V - ISOTOP PowerMESH⑩ IGBT

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GE200NB60S 数据手册

STGE200NB60S

N-channel 150A - 600V - ISOTOP

Low drop PowerMESH™ IGBT

General features

V_CE(sat)

(typ.)

TYPE

V_CES

I_C

T_C

1.2V

1.3V

150A

200A

100°C

25°C

STGE200NB60S 600V

■ High input impedance (voltage driven)

■ Low on-voltage drop (Vcesat)

■ Off losses include tail current

■ Low gate charge

ISOTOP

■ High current capability

Description

Internal schematic diagram

Using the latest high voltage technology based on

a patented strip layout, STMicroelectronics has

designed an advanced family of IGBTs, the

PowerMESH™ IGBTs, with outstanding

performances. The suffix “S” identifies a family

optimized to achieve very low VCE(sat) (@ max

frequency of 1KHz).

Applications

■ Low frequency motor controls

■ Aluminum welding equipment

Order codes

Part number

Marking

Package

Packaging

STGE200NB60S

GE200NB60S

ISOTOP

Tube

November 2006

Rev 8

1/13

www.st.com

12 3 4 5 6 7...13

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