Datasheet > GD50PIX120C6S

GD50PIX120C6S

更新时间： 2024-04-09 19:01:35

品牌	Logo	应用领域
斯达半导体 - STARPOWER		/
页数	文件大小	规格书
13页	285K
描述
C6.0-PIM

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数据手册

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GD50PIX120C6S 数据手册

GD50PIX120C6S

IGBT Module

Diode-inverter Characteristics T_C=25^oC unless otherwise noted

Symbol

Parameter

Test Conditions

I_F=50A,V_GE=0V,T_j=25^oC

I_F=50A,V_GE=0V,T_j=125^oC

I_F=50A,V_GE=0V,T_j=150^oC

Min. Typ. Max. Unit

1.85 2.30

Diode Forward

Voltage

V_F

1.90

1.95

6.3

Q_r

Recovered Charge

Peak Reverse

Recovery Current -di/dt=1400A/μs,V_GE=-15V

Reverse Recovery

Energy

Recovered Charge

Peak Reverse

Recovery Current -di/dt=1400A/μs,V_GE=-15V

Reverse Recovery

Energy

Recovered Charge

Peak Reverse

Recovery Current -di/dt=1400A/μs,V_GE=-15V

Reverse Recovery

Energy

μC

V_R=600V,I_F=50A,

I_RM

T_j=25^oC

E_rec

Q_r

1.67

10.1

μC

V_R=600V,I_F=50A,

I_RM

T_j=125^oC

E_rec

Q_r

2.94

11.5

μC

V_R=600V,I_F=50A,

I_RM

T_j=150^oC

E_rec

3.63

Diode-rectifier Characteristics T_C=25^oC unless otherwise noted

Symbol

Parameter

Diode Forward

Voltage

Test Conditions

I_F=50A,V_GE=0V,T_j=150^oC

T_j=150^oC,V_R=1600V

Min. Typ. Max. Unit

V_F

I_R

0.90

Reverse Current

2.0

1/10/2020

4/13

preliminary

1 2 345 6 7...13

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