Datasheet > GD50HFF120C1S

GD50HFF120C1S

更新时间： 2024-04-09 18:59:04

品牌	Logo	应用领域
斯达半导体 - STARPOWER		/
页数	文件大小	规格书
9页	191K
描述
C1.0-Half Bridge

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GD50HFF120C1S 数据手册

GD50HFF120C1S

IGBT Module

Diode Characteristics T_C=25^oC unless otherwise noted

Symbol

Parameter

Test Conditions

I_F=50A,V_GE=0V,T_j=25^oC

I_F=50A,V_GE=0V,T_j=125^oC

I_F=50A,V_GE=0V,T_j=150^oC

Min. Typ. Max. Units

1.80 2.25

Diode Forward

Voltage

V_F

1.85

4.6

Q_r

Recovered Charge

Peak Reverse

Recovery Current -di/dt=1000A/μs,V_GE=-15V

Reverse Recovery

Energy

Recovered Charge

Peak Reverse

Recovery Current -di/dt=1000A/μs,V_GE=-15V

Reverse Recovery

Energy

Recovered Charge

Peak Reverse

Recovery Current -di/dt=1000A/μs,V_GE=-15V

Reverse Recovery

Energy

μC

V_R=600V,I_F=50A,

I_RM

T_j=25^oC

E_rec

Q_r

1.8

8.9

μC

V_R=600V,I_F=50A,

I_RM

T_j=125^oC

E_rec

Q_r

3.4

10.5

μC

V_R=600V,I_F=50A,

I_RM

T_j=150^oC

E_rec

4.2

Module Characteristics T_C=25^oC unless otherwise noted

Symbol

L_CE

R_CC’+EE’

Parameter

Min.

Typ.

Max.

Unit

mΩ

Stray Inductance

Module Lead Resistance, Terminal to Chip

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

Case-to-Heatsink (per IGBT)

Case-to-Heatsink (per Diode)

Case-to-Heatsink (per Module)

Terminal Connection Torque, Screw M5

Mounting Torque, Screw M6

Weight of Module

0.75

0.476

0.549

R_thJC

K/W

0.187

0.215

0.050

R_thCH

K/W

2.5

3.0

5.0

N.m

150

4/27/2016

4/9

UX0A

1 2 345 6 7...9

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