Datasheet > GD150PIX120C6SN

GD150PIX120C6SN

更新时间： 2024-04-09 19:02:04

品牌	Logo	应用领域
斯达半导体 - STARPOWER		/
页数	文件大小	规格书
13页	243K
描述
C6.6-PIM

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GD150PIX120C6SN 数据手册

GD150PIX120C6SN

IGBT Module

Absolute Maximum Ratings T_C=25^oC unless otherwise noted

IGBT-inverter

Symbol

V_CES

V_GES

Description

Collector-Emitter Voltage

Values

Unit

1200

±20

295

Gate-Emitter Voltage

Collector Current @ T_C=25^oC

I_C

@ T_C=100^oC

150

I_CM

P_D

Pulsed Collector Current t_p=1ms

Maximum Power Dissipation @ T_j=175^oC

300

1127

Diode-inverter

Symbol

V_RRM

I_F

Description

Repetitive Peak Reverse Voltage

Diode Continuous Forward Current

Diode Maximum Forward Current t_p=1ms

Values

1200

150

Unit

I_FM

300

Diode-rectifier

Symbol

V_RRM

I_O

Description

Repetitive Peak Reverse Voltage

Average Output Current 50Hz/60Hz,sine wave

Surge Forward Current V_R=0V,t_p=10ms,T_j=45^oC

I²t-value,V_R=0V,t_p=10ms,T_j=45^oC

Value

1600

150

1800

16200

Unit

I_FSM

I²t

A²s

IGBT-brake

Symbol

V_CES

V_GES

Description

Collector-Emitter Voltage

Value

1200

±20

200

Unit

Gate-Emitter Voltage

Collector Current @ T_C=25^oC

I_C

@ T_C=100^oC

100

I_CM

P_D

Pulsed Collector Current t_p=1ms

Maximum Power Dissipation @ T_j=175^oC

200

862

Diode-brake

Symbol

V_RRM

I_F

Description

Repetitive Peak Reverse Voltage

Diode Continuous Forward Current

Diode Maximum Forward Current t_p=1ms

Value

1200

Unit

I_FM

100

Module

Symbol

Description

Value

175

150

Unit

^oC

Maximum Junction Temperature(inverter,brake)

Maximum Junction Temperature (rectifier)

Operating Junction Temperature

Storage Temperature Range

Isolation Voltage RMS,f=50Hz,t=1min

T_jmax

T_jop

T_STG

V_ISO

-40 to +150

-40 to +125

2500

11/16/2017

2/13

Preliminary

123 4 5 6 7...13

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