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GD15PJT120F1S_T4 PDF预览

GD15PJT120F1S_T4

更新时间: 2024-11-02 17:01:43
品牌 Logo 应用领域
斯达半导体 - STARPOWER /
页数 文件大小 规格书
8页 342K
描述
F1.1.PIM

GD15PJT120F1S_T4 数据手册

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GD15PJT120F1S_T4  
IGBT Module  
STARPOWER  
SEMICONDUCTOR  
IGBT  
GD15PJT120F1S_T4  
Molding Type Module  
1200V/15A PIM in one-package  
General Description  
STARPOWER IGBT Power Module provides ultra  
low conduction loss as well as short circuit ruggedness.  
They are designed for the applications such as  
general inverters and UPS.  
Features  
Low VCE(sat) Trench IGBT technology  
10μs short circuit capability  
V
CE(sat) with positive temperature coefficient  
Maximum junction temperature 175  
Fast & soft reverse recovery anti-parallel FWD  
Typical Applications  
Inverter for motor drive  
AC and DC servo drive amplifier  
Uninterruptible power supply  
©2013 STARPOWER Semiconductor Ltd.  
1/15/2013  
1/8  
Preliminary