5秒后页面跳转
GD15PJT60F1S PDF预览

GD15PJT60F1S

更新时间: 2024-11-02 17:01:59
品牌 Logo 应用领域
斯达半导体 - STARPOWER /
页数 文件大小 规格书
10页 313K
描述
F1.1.PIM

GD15PJT60F1S 数据手册

 浏览型号GD15PJT60F1S的Datasheet PDF文件第2页浏览型号GD15PJT60F1S的Datasheet PDF文件第3页浏览型号GD15PJT60F1S的Datasheet PDF文件第4页浏览型号GD15PJT60F1S的Datasheet PDF文件第5页浏览型号GD15PJT60F1S的Datasheet PDF文件第6页浏览型号GD15PJT60F1S的Datasheet PDF文件第7页 
GD15PJT60F1S  
IGBT Module  
STARPOWER  
SEMICONDUCTOR  
IGBT  
GD15PJT60F1S  
Molding Type Module  
600V/15A PIM in one-package  
General Description  
STARPOWER IGBT Power Module provides ultra  
low conduction loss as well as short circuit ruggedness.  
They are designed for the applications such as  
general inverters and UPS.  
Features  
Low VCE(sat) Trench IGBT technology  
Low switching loss  
5μs short circuit capability  
V
CE(sat) with positive temperature coefficient  
Maximum junction temperature 175  
Fast & soft reverse recovery anti-parallel FWD  
Typical Applications  
Inverter for motor drive  
AC and DC servo drive amplifier  
Uninterruptible power supply  
©2014 STARPOWER Semiconductor Ltd.  
1/19/2014  
1/10  
Preliminary