■AEC-Q200 Murata Standard Specification and Test Methods
Specification.
No AEC-Q200 Test Item
Pre-and Post-Stress
AEC-Q200 Test Method
Temperature
Compensating Type
High Dielectric Type
1
-
Electrical Test
2
High Temperature
Exposure (Storage)
The measured and observed characteristics should satisfy the
specifications in the following table.
Solder the capacitor on the test substrate(glass epoxy board).
Set the capacitor for 1000+/-12h at 150+/-3℃.
Appearance No marking defects
Capacitance Within +/-2.5% or +/-0.25pF
Set for 24+/-2h at room temperature, then measure.
Within +/-10.0%
・ Initial measurement for high dielectric constant type
Perform a heat treatment at 150+0/-10 ℃for 1h and then sit
for 24+/-2h at room temperature.Perform the initial measurement.
Change
(Whichever is larger)
Q or D.F.
30pFmin. : Q≧1000
R7/L8 W.V.: 25Vmin. : 0.03 max.
W.V.: 16V/10V : 0.05 max.
R9 : 0.075max.
30pFmax.: Q ≧400+20C
C: Nominal Capacitance(pF)
I.R.
5C/5G/R7/L8 : More than 10,000MΩ or 500Ω・F(Whichever is smaller)
R9 : More than 3000MΩ or 150Ω ・F(Whichever is smaller)
The measured and observed characteristics should satisfy the
specifications in the following table.
25℃
3
Temperature Cycling
Solder the capacitor on the test substrate(glass epoxy board).
Perform cycle test according to the four heat treatments listed
in the following table.
Appearance No marking defects
Set for 24+/-2h at room temperature, then measure.
Capacitance Within +/-2.5% or +/-0.25pF
Within +/-10.0%
Cycles
Step
Time(min)
Change
(Whichever is larger)
1000(for ΔC/R7)
-55℃+0/-3
Room
300(for 5G/L8/R9)
-55℃+0/-3
Room
1
2
3
4
15+/-3
1
15+/-3
1
Q or D.F.
30pFmin. : Q≧1000
R7/L8 W.V.: 25Vmin. : 0.03 max.
W.V.: 16V/10V : 0.05 max.
R9 : 0.075 max.
125℃+3/-0
Room
150℃+3/-0
Room
30pFmax.: Q ≧400+20C
C: Nominal Capacitance(pF)
・ Initial measurement for high dielectric constant type
Perform a heat treatment at 150+0/-10 ℃for 1h and then sit
for 24+/-2h at room temperature.Perform the initial measurement.
I.R.
More than 10,000MΩ or 500Ω・F
25℃
(Whichever is smaller)
4
5
Destructive
No defects or abnormalities
Per EIA-469.
Physical Analysis
Moisture Resistance
The measured and observed characteristics should satisfy the
specifications in the following table.
Solder the capacitor on the test substrate(glass epoxy board).
Apply the 24h heat (25℃ to 65℃) and humidity (80%RH to 98%RH)
treatment shown below, 10 consecutive times.
Appearance No marking defects
Set for 24+/-2h at room temperature, then measure.
Capacitance Within +/-3.0% or +/-0.30pF
Within +/-12.5%
Humidity
80～98%
Humidity
80～98%
Temperature
Change
(Whichever is larger)
Humidity
90～98%
Humidity
90～98%
Humidity
90～98%
(℃)
70
65
60
55
50
45
40
35
30
25
20
15
10
5
Q or D.F.
30pFmin. : Q≧350
R7/L8 : W.V.: 35Vmin.: 0.03 max.
W.V.: 25Vmax. : 0.05 max.
R9 : 0.075max.
10pF and over, 30pF and below:
Q≧275+5C/2
10pFmax.: Q ≧200+10C
C: Nominal Capacitance(pF)
+10
- 2 ℃
I.R.
5C/5G/R7/L8 : More than 10,000MΩ or 500Ω・F(Whichever is smaller)
R9 : More than 3000MΩ or 150Ω ・F(Whichever is smaller)
Initial measuremt
25℃
0
-5
-10
One cycle 24hours
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Hours
・ Initial measurement for high dielectric constant type
Perform a heat treatment at 150+0/-10 ℃for 1h and then sit
for 24+/-2h at room temperature.Perform the initial measurement.
6
The measured and observed characteristics should satisfy the
specifications in the following table.
Biased Humidity
Solder the capacitor on the test substrate(glass epoxy board).
Apply the rated voltage and 1.3+0.2/-0Vdc (add 6.8kΩ resister)
at 85+/-3℃ and 80%RH to 85%RH humidity for 1000+/-12h.
The charge/discharge current is less than 50mA.
Appearance No marking defects
Remove and set for 24+/-2h at room temperature, then measure.
Capacitance Within +/-3.0% or +/-0.30pF
Within +/-12.5%
Change
(Whichever is larger)
・ Initial measurement for high dielectric constant type
Perform a heat treatment at 150+0/-10 ℃for 1h and then sit
for 24+/-2h at room temperature.Perform the initial measurement.
Q or D.F.
30pF and over: Q≧200
R7/L8 W.V.: 35Vmin.: 0.035 max.*
* GCM188L81H221 to 103 : 0.05 max.
W.V.: 25Vmax. : 0.05 max.
R9 : 0.075max.
30pF and below: Q≧100+10C/3
C: Nominal Capacitance(pF)
I.R.
More than 1,000MΩ or 50Ω・F
25℃
(Whichever is smaller)
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