Datasheet > GC9924-QB1-128C

GC9924-QB1-128C

更新时间： 2025-07-14 05:14:35

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
5页	614K
描述
Mixer Diode, Low Barrier, S Band, Silicon,

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GC9924-QB1-128C 数据手册

Schottky Devices

MONOLITHIC SCHOTTKY DIODES FOR MIXERS TO 26.5 GHz

• Low Capacitance. For Applications to 26.5 GHz

• Silicon Dioxide / Silicon Nitride Passivation

• Monolithic Glass Support Design

• Ultra-Low through High Barrier

Heights

• Monolithic Design Insures Matched

Junctions

• Wafer Level “SPC”

DESCRIPTION

New Schottky Barrier devices are currently available in single beamlead, dual “T”, ring quad and bridge quad

configurations. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic

packages. Monolithic devices are recommended for highest frequency, broadband designs. The beamlead design

eliminates the problems associated with wire bonding very small junction devices thus improving reliability and

performance in MIC applications. Our in house epitaxy process capability insures repeatability for lowest conversion

loss through Ku Band. A broad range of unique metalization schemes produce Microsemi’s complete line of barrier

heights. Diodes are currently available with barrier heights as low as 240 mV and up to 625 mV per junction. By

optimizing epitaxy and metalization, these devices achieve the lowest Rs-Cj products resulting in exceptional

conversion loss performance. “High Rel” screening is available on packaged devices per your requirements.

APPLICATIONS

SCHOTTKY Barrier diodes are suitable for a variety of circuit applications ranging from single ended RF mixers to low

level high speed switching. The monolithic beamlead design minimizes parasitic inductance and capacitance insuring

repeatable performance through Ku band. Single junction devices such as the style ‘S12’ are well suited for RF Mixers,

level detectors, phase detectors, modulators, etc. With junction capacitances as low as .06 pF, Monolithic Quads are

ideally suited for broadband double balanced mixer designs through 26.5 GHz. The Ultra-Low Barrier devices (GC9900

Series) are designed for mixers with low or starved Local Oscillator levels where optimal conversion loss is a must. High

barrier diodes, (GC9940 Series) are designed for applications where high drive levels are available, such as, Doppler

mixers or motion detection. Schottky diodes are available in Ultra-Low, Medium and High Drive levels to fit virtually any

circuit requirement.

Microsemi – Lowell

75 Technology Drive, Lowell, MA 01851 Tel. (978) 442-5600

12 3 4 5

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与GC9924-QB1-128C相关器件

型号	品牌	获取价格	描述	数据表
GC9924-QR1	MICROSEMI	获取价格	Mixer Diode, Low Barrier, S Band, 5.5dB Noise Figure, Silicon, ROHS COMPLIANT, HERMETIC SE
GC9924-QR1-127C	MICROSEMI	获取价格	Mixer Diode, Low Barrier, S Band, Silicon,
GC9924-QR1-128C	MICROSEMI	获取价格	Mixer Diode, Low Barrier, S Band, Silicon,
GC9924-QR1-129C	MICROSEMI	获取价格	Mixer Diode, Low Barrier, S Band, Silicon,
GC9924-S12	MICROSEMI	获取价格	Mixer Diode, Low Barrier, S Band, 5.5dB Noise Figure, Silicon, ROHS COMPLIANT, HERMETIC SE
GC9924-TCA	MICROSEMI	获取价格	Mixer Diode, Low Barrier, S Band, 5.5dB Noise Figure, Silicon, ROHS COMPLIANT, HERMETIC SE
GC9924-TCA-127B	MICROSEMI	获取价格	Mixer Diode, Low Barrier, S Band, Silicon,
GC9924-TCC	MICROSEMI	获取价格	Mixer Diode, Low Barrier, S Band, 5.5dB Noise Figure, Silicon, ROHS COMPLIANT, HERMETIC SE
GC9924-TCC-127B	MICROSEMI	获取价格	Mixer Diode, Low Barrier, S Band, Silicon,
GC9924-TCC-128B	MICROSEMI	获取价格	Mixer Diode, Low Barrier, S Band, Silicon,

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