GC9921-174C-QB1 PDF预览

GC9921-174C-QB1

更新时间: 2025-07-24 16:07:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
6页 210K
描述
Mixer Diode, Low Barrier, KU Band to KA Band, Silicon, ROHS COMPLIANT, CASE 174C, 4 PIN

GC9921-174C-QB1 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:O-CRDB-F4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.60风险等级:5.63
配置:BRIDGE, 4 ELEMENTS最大二极管电容:0.1 pF
二极管元件材料:SILICON二极管类型:MIXER DIODE
最大正向电压 (VF):0.47 V频带:KU BAND TO KA BAND
JESD-30 代码:O-CRDB-F4JESD-609代码:e4
元件数量:4端子数量:4
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
峰值回流温度(摄氏度):NOT SPECIFIED子类别:Bridge Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:GOLD端子形式:FLAT
端子位置:RADIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
肖特基势垒类型:LOW BARRIERBase Number Matches:1

GC9921-174C-QB1 数据手册

 浏览型号GC9921-174C-QB1的Datasheet PDF文件第2页浏览型号GC9921-174C-QB1的Datasheet PDF文件第3页浏览型号GC9921-174C-QB1的Datasheet PDF文件第4页浏览型号GC9921-174C-QB1的Datasheet PDF文件第5页浏览型号GC9921-174C-QB1的Datasheet PDF文件第6页 
GC9901 – GC9944  
Schottky Barrier Diodes  
®
TM  
For Mixers and Detectors  
RoHS Compliant  
DESCRIPTION  
KEY FEATURES  
Schottky Barrier devices are currently available in single beamlead, dual “T”,  
ring quad and bridge quad configurations. Devices are available in monolithic  
form for hybrid applications as well as in hermetic or non-hermetic packages.  
Monolithic devices are recommended for highest frequency, broadband  
designs. The beamlead design eliminates the problems associated with wire  
bonding very small junction devices thus improving reliability and  
performance in MIC applications. Our in house epitaxy process capability  
insures repeatability for lowest conversion loss through Ku Band. A broad  
range of unique metallization schemes produce Microsemi’s complete line of  
barrier heights. Diodes are currently available with barrier heights as low as  
240 mV and up to 625 mV per junction. By optimizing epitaxy and  
metallization, these devices achieve the lowest RS-CJ products resulting in  
exceptional conversion loss performance. “High Rel” screening is available on  
packaged devices per your requirements.  
. Monolithic design for lowest  
parasitics  
. Low Conversion Loss  
. Suitable for applications to 26.5  
GHz  
. Excellent Noise Figure  
. Available in low, medium and high  
barrier heights  
. Can be supplied as monolithic  
devices for hybrid applications or  
as packaged devices  
This series of devices meets RoHS requirements per EU Directive  
2002/95/EC.  
. RoHS Compliant1  
1 These devices are supplied with Gold  
plated terminations. Consult factory for  
details.  
APPLICATIONS  
Schottky barrier diodes are suitable for a variety of circuit applications ranging  
from single ended RF mixers to low level high speed switching. The  
monolithic beamlead design minimizes parasitic inductance and capacitance  
insuring repeatable performance through Ku band. Single junction devices  
such as the style ‘S12’ are well suited for RF Mixers, level detectors, phase  
detectors, modulators, etc. With junction capacitances as low as .06 pF,  
Monolithic Quads are ideally suited for broadband double balanced mixer  
designs through 26.5 GHz. The Ultra-Low Barrier devices (GC9900 Series)  
are designed for mixers with low or starved Local Oscillator levels where  
optimal conversion loss is a must. High barrier diodes, (GC9940 Series) are  
designed for applications where high drive levels are available, such as,  
Doppler mixers or motion detection. Schottky diodes are available in Ultra-  
Low, Medium and High Drive levels to fit virtually any circuit requirement.  
APPLICATIONS/BENEFITS  
. Mixers  
. Level Detectors  
. Phase Detectors  
ABSOLUTE MAXIMUM RATINGS AT 25º C  
(UNLESS OTHERWISE SPECIFIED)  
Rating  
Symbol  
Value  
Unit  
Maximum Power Handling  
Storage Temperature  
P
100  
mW  
ºC  
TSTG  
-65 to +175  
Operating Temperature  
TOP  
-55 to +150  
ºC  
IMPORTANT:  
For the most current data, consult our web site: www.microsemi.com  
Specifications are subject to change. Consult factory for latest information.  
These devices are ESD sensitive and must be handled use using ESD precautions.  
Microsemi  
Page 1  
Copyright 2006  
Rev: 2009-01-19  
Microwave Products  
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748  

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