Datasheet > GC2515-00

GC2515-00

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
3页	174K
描述
Step Recovery Diode, Silicon, ROHS COMPLIANT, CASE 00, 2 PIN

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GC2515-00 数据手册

GC2510 – GC2546

POWER GENERATION

Step Recovery Diodes

RoHS Compliant

CHIP ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)

P¹(˚C/W)⁴

V_b(V)

C_j(pF)¹

T_L(ns)²

T_T(ps)

R_s(Ω)³

I_R=10μA

@-6V

@25 mA

Model Number

(Max)

(Min)

(Typ)

(Max)

GC2510

GC2511

GC2512

GC2513

GC2514

GC2515

GC2516

GC2520

GC2521

GC2522

GC2523

GC2524

GC2525

GC2526

GC2530

GC2531

GC2532

GC2533

GC2534

GC2535

GC2536

GC2540

GC2541

GC2542

GC2543

GC2544

GC2545

GC2546

0.2-0.4

0.4-0.6

0.6-0.8

0.8-1.0

1.0-1.4

1.4-2.0

2.0-3.0

0.2-0.4

0.4-0.6

0.6-0.8

0.8-1.0

1.0-1.4

1.4-2.0

2.0-3.0

0.2-0.4

0.4-0.6

0.6-0.8

0.8-1.0

1.0-1.4

1.4-2.0

2.0-3.0

0.2-0.4

0.4-0.6

0.6-0.8

0.8-1.0

1.0-1.4

1.4-2.0

2.0-3.0

1.2

1.0

0.7

0.5

0.4

0.3

0.25

1.0

0.7

0.6

0.5

0.4

0.3

0.25

0.8

0.6

0.5

0.4

0.3

0.25

0.2

0.8

0.6

0.5

0.4

0.3

0.25

0.2

125

100

150

Notes:

Junction capacitance is measure at 1 MHz.

Carrier lifetime is measure at I_F= 10mA, I_R= 6mA .

Series resistance is measure using a transmission loss technique @ 1 GHz.

Thermal resistance is measure using pulsed conditions while measuring forward voltage drop

across the diode mounted in an infinite heat sink.

Microsemi

Page 2

Rev.: 2009-02-03

Microwave Products

75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

123

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