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GBU606-G PDF预览

GBU606-G

更新时间: 2024-01-08 20:19:40
品牌 Logo 应用领域
上华 - COMCHIP /
页数 文件大小 规格书
3页 80K
描述
Glass Passivated Bridge Rectifiers

GBU606-G 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.76
Base Number Matches:1

GBU606-G 数据手册

 浏览型号GBU606-G的Datasheet PDF文件第2页浏览型号GBU606-G的Datasheet PDF文件第3页 
Glass Passivated Bridge Rectifiers  
GBU6005-G Thru. GBU610-G  
Reverse Voltage: 50 to 1000V  
Forward Current: 6.0A  
RoHS Device  
GBU  
Features  
-Surge overload rating - 175 amperes peak.  
-Ideal for printed circuit board.  
0.437(11.1)  
0.430(10.9)  
0.139(3.53)  
0.133(3.37)  
0.874(22.2)  
0.860(21.8)  
0.126(3.2)*45°  
Chamfer  
0.161(4.1)  
0.134(3.4)  
0.232(5.90)  
0.213(5.40)  
0.752(19.1)  
0.720(18.3)  
Mechanical Data  
0.401(10.2)  
0.073(1.85)  
0.057(1.45)  
0.392(9.80)  
-Epoxy: U/L 94-V0 rate flame retardant.  
-Case: Molded plastic, GBU  
-Mounting position: Any  
-Weight: 3.91grams  
0.100(2.54)  
0.085(2.16)  
0.720(18.29)  
0.106(2.7)  
0.091(2.3)  
0.680(17.27)  
0.080(2.03)  
0.065(1.65)  
0.047(1.2)  
0.035(0.9)  
0.022(0.56)  
0.018(0.46)  
0.210(5.3)  
0.190(4.8)  
0.210(5.3)  
0.190(4.8)  
0.210(5.3)  
0.190(4.8)  
Dimensions in inches and (millimeter)  
Maximum ratings and electrical characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
GBU  
GBU  
GBU  
GBU  
GBU  
GBU  
GBU  
Symbol  
Parameter  
Unit  
6005-G  
601-G  
602-G  
604-G  
606-G  
608-G  
610-G  
1000  
700  
Maximum Reverse Peak Repetitive Voltage  
V
RRM  
RMS  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
V
V
V
V
Maximum RMS Voltage  
VDC  
100  
1000  
Maximum DC Blocking Voltage  
6.0  
2.8  
Maximum Average Forward (With heatsink Note2)  
Rectified Current @Tc=100°C (without hestsink)  
I
(AV)  
A
A
Peak Forward Surage Current ,  
8.3ms Single Half Sine-Wave  
IFSM  
175  
Super Imposed On Rated Load(JEDEC Method)  
Maximum Forward Voltage Drop  
Per Bridge Element at 3.0A Peak  
1.1  
VF  
V
@TJ=25°C  
@TJ=125°C  
10.0  
500  
Maximum Reverse Current  
At Rate DC Blocking Voltage  
μA  
IR  
I2 T Rating for Fusing(t<8.3ms)  
A2s  
pF  
I2t  
127  
Typical Junction Capacitandce Per Element  
(Note 1)  
C
J
50  
Typical Thermal Resistance  
RθJC  
2.2  
°C/W  
°C  
Operating Temperature Range  
-55 to +150  
-55 to +150  
TJ  
Storage Temperature Range  
Notes:  
TSTG  
°C  
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
2. Device mounted on 75mm*75mm*1.6mm Cu plate heatsink.  
REV:A  
Page 1  
QW-BBR71  
Comchip Technology CO., LTD.  

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