GBU10J-BP PDF预览

GBU10J-BP

更新时间: 2025-08-10 11:56:55
品牌 Logo 应用领域
美微科 - MCC 整流二极管桥式整流二极管局域网
页数 文件大小 规格书
3页 142K
描述
10 Amp Single Phase Glass Passivated Bridge Rectifiers 50 to 1000 Volts

GBU10J-BP 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:R-PSFM-T4
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:2.1Is Samacsys:N
其他特性:UL RECOGNIZED最小击穿电压:600 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1.1 V
JESD-30 代码:R-PSFM-T4JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:200 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

GBU10J-BP 数据手册

 浏览型号GBU10J-BP的Datasheet PDF文件第2页浏览型号GBU10J-BP的Datasheet PDF文件第3页 
GBU10A  
THRU  
GBU10M  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
xꢀ Glass Passivated Chip junction  
xꢀ High Surge Overload Rating  
10 Amp Single Phase  
Glass Passivated  
Bridge Rectifiers  
50 to 1000 Volts  
UL Recognized File # E165989  
Case Material:Molded Plastic. UL Flammability  
Classificatio Rating 94-0 and MSL Rating 1  
Lead Free Finish/RoHS Compliant (NOTE 1)("P" Suffix  
designates RoHS Compliant. See ordering information)  
Maximum Ratings  
GBU  
xꢀ Operating Temperature: -55к to +150к  
xꢀ Storage Temperature: -55к to +150к  
xꢀ Typical Thermal Resistance:2.2к/W Junction to Case(Heatsink)  
Maximum  
Recurrent  
Maximum DC  
Blocking  
Voltage  
MCC  
Maximum  
Part Number Peak Reverse RMS Voltage  
Voltage  
Case Style  
GBU10A  
GBU10B  
GBU10D  
GBU10G  
GBU10J  
GBU10K  
GBU10M  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
35V  
70V  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
3.2x45  
A
C
N
N
N
I
140V  
280V  
420V  
560V  
700V  
G
K
H
B
J
1.90 RADIUS  
N
-
+
~
~
D
Electrical Characteristics @ 25к Unless Otherwise Specified  
Maximum Average  
L
E
Forward Current  
(with heatsink Note  
1)  
M
F
TC = 100к  
IF(AV)  
10 A  
DIMENSIONS  
INCHES  
MM  
Peak Forward Surge  
Current  
Maximum  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
DIM  
A
B
C
D
E
F
G
H
I
J
MIN  
.860  
.720  
.130  
.690  
.030  
.018  
.290  
.140  
.065  
.089  
.077  
.040  
.190  
MAX  
MIN  
21.80  
18.30  
3.30  
17.50  
0.76  
0.46  
7.40  
3.50  
1.65  
2.25  
1.95  
1.02  
4.83  
MAX  
NOTE  
IFSM  
200A  
1.1V  
8.3ms, half sine  
.880  
.740  
.140  
.710  
.039  
.022  
.310  
.160  
.085  
.108  
.093  
.050  
.210  
22.30  
18.80  
3.56  
18.00  
1.00  
0.56  
7.90  
4.10  
2.16  
2.75  
2.35  
1.27  
5.33  
At 5A DC  
VF  
TA = 25к  
5.0uA  
500uA  
IR  
TA = 125к  
K
L
M
N
Typical Junction  
Capacitance  
I2t Rating for Fusing  
Measured at  
1.0MHz, VR=4.0V  
CJ  
I2t  
70pF  
7.0 TYPICAL  
200A2S t<8.3ms  
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7  
www.mccsemi.com  
Revision: 6  
2008/03/24  
1 of 3  

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