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GBU10KL PDF预览

GBU10KL

更新时间: 2024-11-21 14:56:03
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 756K
描述

GBU10KL 技术参数

生命周期:Active包装说明:R-PSFM-T4
Reach Compliance Code:compliant风险等级:5.57
其他特性:UL RECOGNIZED最小击穿电压:800 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSFM-T4
最大非重复峰值正向电流:200 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
最大重复峰值反向电压:800 V表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

GBU10KL 数据手册

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Features  
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• Lead Free Finish/Ro+6 Compliant (Note1) ("P"Suffix  
'esignatesCompliant. See 2rdering ,nformation)  
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Maximum Ratings  
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GBU  
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3.2x45  
A
C
• Mounting Torque: 5in-lbs  
N
N
N
G
H
Maximum  
B
Maximum  
RMS  
Voltage  
Maximum DC  
Blocking  
,
Device  
MCC  
Recurrent  
Peak Reverse  
Voltage  
J
1.90 RADIUS  
Marking  
Part Number  
N
Voltage  
-
~
~
+
K
GBU10KL  
GBU10KL  
800V  
560V  
800V  
D
L
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E
M
F
Maximum Average  
Forward Current  
IF(AV)  
10A  
TC= 110°C  
Peak Forward  
Surge Current  
DIMENSIONS  
MM  
MIN MAX MIN MAX  
IFSM  
8.3ms,+alf 6ine  
200A  
INCHES  
DIM  
NOTE  
A
B
C
D
E
F
G
H
,
J
K
L
M
N
0.860 0.880 21.80 22.30  
0.720 0.740 18.30 18.80  
0.130 0.142 3.30 3.60  
0.690 0.717 17.50 18.20  
0.030 0.039 0.76 1.00  
0.018 0.024 0.46 0.60  
0.290 0.310 7.40 7.90  
0.140 0.160 3.50 4.10  
0.065 0.085 1.65 2.16  
0.060 0.096 1.52 2.45  
0.077 0.098 1.95 2.50  
0.040 0.050 1.02 1.27  
0.190 0.210 4.83 5.33  
7.0° TYPICAL  
Maximum  
Instantaneous  
Forward Voltage  
At 5A DC  
VF  
0.90V  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
5.0μA  
T- = 25°C  
IR  
500μA  
T- = 125°C  
Typical Junction  
Capacitance  
Measured at  
1.0MHz, VR=4.0V  
CJ  
I2t  
70pF  
200A2s  
t<8.3ms  
Rating for )using  
Note: 1. High Temperature Solder Exemption Applied, 6ee EU Directive Annex 7a  
2. Device mounted on 75mm x 45mm x 5.5mm Aluminum Plate Heatsink.  
Rev.3-3-05192022  
1/3  
MCCSEMI.COM  

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