5秒后页面跳转
GBPC5010W PDF预览

GBPC5010W

更新时间: 2024-01-23 05:09:15
品牌 Logo 应用领域
GENESIC 二极管
页数 文件大小 规格书
4页 334K
描述
Single Phase Glass Passivated Silicon Bridge Rectifier

GBPC5010W 技术参数

生命周期:Active包装说明:S-PUFM-W4
针数:4Reach Compliance Code:compliant
Factory Lead Time:8 weeks风险等级:5.6
其他特性:LOW POWER LOSS, UL RECOGNIZED最小击穿电压:1000 V
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:S-PUFM-W4最大非重复峰值正向电流:450 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:50 A
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:1000 V表面贴装:NO
端子形式:WIRE端子位置:UPPER
Base Number Matches:1

GBPC5010W 数据手册

 浏览型号GBPC5010W的Datasheet PDF文件第2页浏览型号GBPC5010W的Datasheet PDF文件第3页浏览型号GBPC5010W的Datasheet PDF文件第4页 
GBPC5006T/W thru GBPC5010T/W  
VRRM = 600 V - 1000 V  
IO = 50 A  
Single Phase Glass Passivated  
Silicon Bridge Rectifier  
Features  
• Integrally molded heat sink provides low thermal resistance  
for maximum heat dissipation  
• High surge current capability  
• Void-free junction soldering by using vacuum soldering  
• Universal 3-way terminals: snap on, wire-around, or P.C  
board mounting  
GBPC-T/W Package  
• High temperature soldering guaranteed: 260⁰C/ 10  
seconds at 5 lbs (2.3 kg) tension  
• Not ESD Sensitive  
Mechanical Data  
Case: Molded plastic with heat sink integrally mounted in the bridge  
encapsulation  
Terminals: Either nickel plated 0.25". Faston lugs or copper leads  
0.040" diameter.  
Polarity: Polarrity symbols marked on the body  
Mounting position: Bolt down on heat-sink with silicone thermal  
compound between bridge and mounting surface  
Weight: 19 grams or 0.67 ounces  
Mounting torque: 20 inch-lbs max  
Maximum ratings at Tc = 25 °C, unless otherwise specified (GBPCXXXXT uses GBPC-T package while GBPCXXXXW  
uses GBPC-W package)  
Conditions  
GBPC5010T/W  
Parameter  
Symbol  
GBPC5006T/W  
GBPC5008T/W  
Unit  
VRRM  
VRMS  
VDC  
Tj  
1000  
700  
Repetitive peak reverse voltage  
RMS reverse voltage  
600  
420  
800  
560  
V
V
1000  
DC blocking voltage  
600  
800  
V
-55 to 150  
-55 to 150  
Operating temperature  
Storage temperature  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
°C  
°C  
Tstg  
Electrical characteristics at Tc = 25 °C, unless otherwise specified  
Single phase, half sine wave, 60 Hz, resistive or inductive load  
For capacitive load derate current by 20%  
Conditions  
GBPC5010T/W  
Parameter  
Symbol  
GBPC5006T/W  
GBPC5008T/W  
Unit  
Maximum average forward rectified  
current  
Tc = 50 °C  
IO  
50.0  
400  
1.2  
50.0  
400  
1.2  
50.0  
400  
1.2  
A
IFSM  
VF  
single sine-wave  
IF = 25 A  
Peak forward surge current  
Maximum instantaneous forward  
voltage drop per leg  
A
V
Ta = 25 °C  
Ta = 125 °C  
5
5
5
Maximum DC reverse current at  
rated DC blocking voltage per leg  
IR  
I2t  
μA  
A2sec  
V
500  
1200  
500  
1200  
500  
1200  
Rating for fusing  
RMS isolation voltage from case to  
leads  
1 ms < tm < 8.3 ms  
VISO  
2500  
2500  
2500  
Cj  
360  
1.2  
360  
1.2  
360  
1.2  
pF  
Typical junction capacitance  
Typical thermal resistance  
RΘJC  
°C/W  
1
Apr 2016  
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/bridge-rectifiers/  

与GBPC5010W相关器件

型号 品牌 描述 获取价格 数据表
GBPC50-10W RFE Bridge Rectifier Diode, 50A, 1000V V(RRM),

获取价格

GBPC50-10W SENSITRON Bridge Rectifier Diode, 1 Phase, 50A, 1000V V(RRM), Silicon, PLASTIC, GBPC-W, 4 PIN

获取价格

GBPC5010-W HY BRIDGE RECTIFIER DIODE

获取价格

GBPC50-10W-G SENSITRON Bridge Rectifier Diode, 1 Phase, 50A, 1000V V(RRM), Silicon, LEAD FREE, PLASTIC, GBPC-W, 4

获取价格

GBPC5010W-G COMCHIP Glass Passivated Bridge Rectifiers

获取价格

GBPC5010W-LF WTE Bridge Rectifier Diode, 1 Phase, 50A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBPC

获取价格